SCHEMBL3482380

SCHEMBL3482380

CCc1ccc([SiH2]OC(C)c2ccccc2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.43
CRHBP P24387 1/20 0.38
CRHR2 Q13324 1/20 0.38
FFAR1 O14842 1/20 0.38
PPARG P37231 1/20 0.36
PPARA Q07869 1/20 0.36
OPRM1 P35372 1/20 0.35
OPRD1 P41143 1/20 0.35
OPRK1 P41145 1/20 0.35
OPRL1 P41146 1/20 0.35
L3MBTL1 Q9Y468 3/20 0.35
ATM Q13315 2/20 0.35
TSHR P16473 1/20 0.35
MAPK1 P28482 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
ALDH1A1 P00352 2/20 0.35
TAOK1 Q7L7X3 1/20 0.35
TAOK3 Q9H2K8 1/20 0.35
CYP19A1 P11511 1/20 0.34
TAAR1 Q96RJ0 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15835144 0.93 TP53 (0.43) TP53CRHBPCRHR2FFAR1PPARG
SCHEMBL3482509 0.84 TP53 (0.45) TP53CRHBPCRHR2PPARGPPARA
SCHEMBL16309500 0.83 HCAR2 (0.39) FFAR1ALDH1A1TAAR1LMNAKMT2A
SCHEMBL3481539 0.81 TP53 (0.42) TP53CRHBPCRHR2PPARGPPARA
SCHEMBL3482494 0.79 TP53 (0.44) TP53CRHBPCRHR2PPARGPPARA
SCHEMBL3482498 0.78 TP53 (0.42) TP53CRHBPCRHR2PPARGPPARA
SCHEMBL3482476 0.77 LPL (0.40) TP53L3MBTL1ATMTSHRMAPK1
SCHEMBL3482158 0.76 F2 (0.42) TP53PPARGPPARACYP19A1BCHE
SCHEMBL3482165 0.76 CYP19A1 (0.40) TP53CRHBPCRHR2PPARGPPARA
SCHEMBL14114020 0.75 FFAR1 (0.62) TP53FFAR1PPARGPPARAS1PR5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed