SCHEMBL3482494

SCHEMBL3482494

CCc1ccc([SiH2]OC(Cc2ccccc2)c2ccccc2)cc1

nearest known ligand 0.44

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.44
PPARG P37231 6/20 0.42
PPARA Q07869 6/20 0.42
SIGMAR1 Q99720 3/20 0.36
CRHBP P24387 1/20 0.35
CRHR2 Q13324 1/20 0.35
SLC6A2 P23975 3/20 0.34
TAAR1 Q96RJ0 2/20 0.34
SLC6A4 P31645 2/20 0.34
SLC6A3 Q01959 2/20 0.34
MAOA P21397 1/20 0.34
CYP2A6 P11509 1/20 0.34
ADORA2A P29274 1/20 0.34
ADORA1 P30542 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703380 0.90 SLC6A2 (0.40) SIGMAR1SLC6A2TAAR1SLC6A4SLC6A3
SCHEMBL3481539 0.87 TP53 (0.42) TP53PPARGPPARACRHBPCRHR2
SCHEMBL3482158 0.85 F2 (0.42) TP53PPARGPPARA
SCHEMBL3482509 0.80 TP53 (0.45) TP53PPARGPPARASIGMAR1CRHBP
SCHEMBL3482380 0.79 TP53 (0.43) TP53PPARGPPARACRHBPCRHR2
SCHEMBL3481891 0.78 TACR1 (0.42) SIGMAR1
SCHEMBL10704774 0.78 LMNA (0.42) SLC6A2TAAR1SLC6A4
SCHEMBL29066974 0.77 SIGMAR1 (0.40) SIGMAR1SLC6A2TAAR1SLC6A4SLC6A3
SCHEMBL4171307 0.76 SIGMAR1 (0.42) SIGMAR1SLC6A2TAAR1SLC6A4SLC6A3
SCHEMBL11844149 0.74 PPARG (0.55) TP53PPARGPPARASLC6A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed