SCHEMBL3481593

SCHEMBL3481593

Cc1ccc(-c2ccccc2[SiH2]O)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 5/20 0.41
KMT2A Q03164 5/20 0.41
POLB P06746 2/20 0.41
HPRT1 P00492 1/20 0.39
LMNA P02545 5/20 0.38
CA12 O43570 1/20 0.38
CA2 P00918 1/20 0.38
CA9 Q16790 1/20 0.38
MCOLN3 Q8TDD5 1/20 0.38
RAB9A P51151 5/20 0.36
NPC1 O15118 4/20 0.36
SYK P43405 1/20 0.36
PDK2 Q15119 1/20 0.36
SMN1; SMN2 Q16637 4/20 0.36
MAPT P10636 3/20 0.36
CYP1A2 P05177 2/20 0.36
CYP2C9 P11712 2/20 0.36
CYP2C19 P33261 2/20 0.36
CYP3A4 P08684 1/20 0.36
HPGD P15428 2/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12825695 0.83 HPRT1 (0.41) MEN1KMT2APOLBHPRT1LMNA
SCHEMBL18921876 0.82 ALDH1A1 (0.48) MEN1KMT2ASMN1; SMN2MAPTHPGD
SCHEMBL3482544 0.79 RAB9A (0.39) MEN1KMT2APOLBHPRT1LMNA
SCHEMBL8036362 0.77 LMNA (0.50) MEN1KMT2APOLBHPRT1LMNA
SCHEMBL29688196 0.72 LMNA (0.53) MEN1KMT2APOLBHPRT1LMNA
SCHEMBL3294988 0.72 LMNA (0.53) MEN1KMT2APOLBHPRT1LMNA
SCHEMBL29360137 0.71 ALDH1A1 (0.65) MEN1KMT2APOLBLMNACA12
SCHEMBL20721749 0.71 ACHE (0.62) MEN1KMT2APOLBNPC1SMN1; SMN2
SCHEMBL894974 0.71 ALDH1A1 (0.65) MEN1KMT2APOLBLMNACA12
SCHEMBL1047559 0.70 CA12 (0.55) MEN1KMT2APOLBLMNACA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed