SCHEMBL3482544

SCHEMBL3482544

Cc1ccc(-c2ccccc2[SiH2]Cl)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RAB9A P51151 7/20 0.39
MEN1 O00255 6/20 0.39
KMT2A Q03164 6/20 0.39
LMNA P02545 3/20 0.39
SMN1; SMN2 Q16637 3/20 0.39
HPGD P15428 3/20 0.39
KDM4E B2RXH2 2/20 0.39
ALDH1A1 P00352 2/20 0.39
MAPT P10636 2/20 0.39
NR2F2 P24468 1/20 0.39
HTT P42858 1/20 0.39
HPRT1 P00492 1/20 0.39
CA12 O43570 1/20 0.38
CA2 P00918 1/20 0.38
CA9 Q16790 1/20 0.38
MCOLN3 Q8TDD5 1/20 0.38
POLB P06746 2/20 0.37
NPC1 O15118 6/20 0.37
L3MBTL1 Q9Y468 3/20 0.37
NFKB1 P19838 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12825695 0.83 HPRT1 (0.41) RAB9AMEN1KMT2ALMNASMN1; SMN2
SCHEMBL28740601 0.82 CYP2A6 (0.48) HPGDALDH1A1TDP1MAPK1
SCHEMBL3481593 0.79 MEN1 (0.41) RAB9AMEN1KMT2ALMNASMN1; SMN2
SCHEMBL8036362 0.77 LMNA (0.50) RAB9AMEN1KMT2ALMNASMN1; SMN2
SCHEMBL3294988 0.72 LMNA (0.53) RAB9AMEN1KMT2ALMNASMN1; SMN2
SCHEMBL29688196 0.72 LMNA (0.53) RAB9AMEN1KMT2ALMNASMN1; SMN2
SCHEMBL30638498 0.71 L3MBTL1 (0.56) RAB9AMEN1KMT2ASMN1; SMN2ALDH1A1
SCHEMBL1045000 0.71 CYP2A6 (0.65) RAB9AMEN1KMT2ALMNASMN1; SMN2
SCHEMBL265482 0.71 L3MBTL1 (0.56) RAB9AMEN1KMT2ASMN1; SMN2ALDH1A1
Water SCHEMBL312989 0.70 HPGD (0.50) RAB9AMEN1KMT2ALMNASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed