Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | LTA4H | P09960 | 2/20 | 0.32 |
| ▸ | TP53 | P04637 | 1/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | HPGD | P15428 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3481654 | 0.93 | LTA4H (0.34) | TSHRLTA4HALDH1A1GAAHPGD | |
| SCHEMBL3481868 | 0.92 | TSHR (0.31) | TSHRLTA4H | |
| SCHEMBL707558 | 0.89 | NR1H2 (0.34) | — | |
| SCHEMBL705821 | 0.88 | LTA4H (0.36) | TSHRLTA4HALDH1A1 | |
| SCHEMBL708502 | 0.86 | LMNA (0.36) | TSHRLTA4HTP53ALDH1A1GAA | |
| SCHEMBL533990 | 0.83 | LTA4H (0.34) | TSHRLTA4HTP53KDM4EALDH1A1 | |
| SCHEMBL706395 | 0.82 | LTA4H (0.43) | TSHRLTA4HALDH1A1GAAHPGD | |
| SCHEMBL3481833 | 0.81 | LTA4H (0.34) | TSHRLTA4HALDH1A1 | |
| SCHEMBL703241 | 0.81 | TP53 (0.32) | TSHRLTA4HTP53KDM4EALDH1A1 | |
| SCHEMBL17937680 | 0.80 | ALDH1A1 (0.33) | TSHRKDM4EALDH1A1HPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115181223-B | Low-gloss matte auxiliary agent, preparation method thereof and molded body | 铨盛聚碳科技股份有限公司 | 2023-08-29 | — | — | CN | claimed |
| CN-115181223-A | Low-gloss matte auxiliary agent, preparation method thereof and formed body | 铨盛聚碳科技股份有限公司 | 2022-10-14 | — | — | CN | claimed |
| CN-115181223-B | Low-gloss matte auxiliary agent, preparation method thereof and molded body | 铨盛聚碳科技股份有限公司 | 2023-08-29 | — | — | CN | disclosed |
| CN-115181223-A | Low-gloss matte auxiliary agent, preparation method thereof and formed body | 铨盛聚碳科技股份有限公司 | 2022-10-14 | — | — | CN | disclosed |
| CN-114085382-A | Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof | 铨盛聚碳科技股份有限公司 | 2022-02-25 | — | — | CN | disclosed |
| CN-109438633-A | A kind of organosilicon toughener and its synthetic method with anti-drop effect | 广东优科艾迪高分子材料有限公司 | 2019-03-08 | — | — | CN | disclosed |
| CN-109337025-A | A kind of anti-dripping agent and its synthetic method with toughening effect | 广东优科艾迪高分子材料有限公司 | 2019-02-15 | — | — | CN | disclosed |
| CN-109320772-A | A kind of anti-dripping agent and preparation method thereof containing organosilicon and inorganic silicon | 广东优科艾迪高分子材料有限公司 | 2019-02-12 | — | — | CN | disclosed |
| CN-109320674-A | A kind of anti-dripping agent and preparation method thereof containing PTFE and organosilicon | 广东优科艾迪高分子材料有限公司 | 2019-02-12 | — | — | CN | disclosed |
| CN-109320937-A | A kind of organic silicon fibre retardant and preparation method thereof based on poroid inorganic matter | 铨盛（云浮）新型聚合物有限公司 | 2019-02-12 | — | — | CN | disclosed |
| CN-109306169-A | A kind of hydridization organic matter and the organic silicon fibre retardant of nano silica and preparation method thereof | 铨盛（云浮）新型聚合物有限公司 | 2019-02-05 | — | — | CN | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-7604866-B2 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2009-10-20 | — | — | US | disclosed |
| CN-100535054-C | Silica film forming material, silica film and preparation method thereof | FUJITSU LTD (JP) | 2009-09-02 | — | — | CN | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| CN-1891757-A | Silica film forming material, silica film and method of manufacturing the same | FUJITSU LTD (JP) | 2007-01-10 | — | — | CN | disclosed |
| US-20060269724-A1 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2006-11-30 | — | — | US | disclosed |
| US-20040077757-A1 | Coating composition for use in producing an insulating thin film | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2004-04-22 | — | — | US | disclosed |