SCHEMBL3481711

SCHEMBL3481711

C[Si](C)(Cl)CCCN1CCOCC1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KEAP1 Q14145 1/20 0.52
SMN1; SMN2 Q16637 1/20 0.52
HPGD P15428 1/20 0.47
DUSP3 P51452 1/20 0.47
LMNA P02545 3/20 0.45
SIGMAR1 Q99720 3/20 0.44
ALDH1A1 P00352 3/20 0.42
MAPK1 P28482 2/20 0.42
CYP1A2 P05177 2/20 0.42
GAA P10253 1/20 0.42
CHRM2 P08172 1/20 0.42
CHRM1 P11229 1/20 0.42
HTR2A P28223 1/20 0.42
SCN1A P35498 1/20 0.42
HTR2B P41595 1/20 0.42
KCNH2 Q12809 1/20 0.42
SCN2A Q99250 1/20 0.42
SCN3A Q9NY46 1/20 0.42
HRH3 Q9Y5N1 1/20 0.42
KDM4E B2RXH2 2/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9520262 0.88 KEAP1 (0.52) KEAP1SMN1; SMN2HPGDDUSP3LMNA
SCHEMBL3482302 0.85 KEAP1 (0.54) KEAP1SMN1; SMN2HPGDDUSP3LMNA
SCHEMBL13532385 0.83 KEAP1 (0.56) KEAP1SMN1; SMN2HPGDDUSP3LMNA
SCHEMBL11647717 0.79 KEAP1 (0.52) KEAP1SMN1; SMN2HPGDDUSP3LMNA
SCHEMBL3481792 0.79 KEAP1 (0.52) KEAP1SMN1; SMN2HPGDDUSP3LMNA
SCHEMBL31550574 0.79 KEAP1 (0.52) KEAP1SMN1; SMN2HPGDDUSP3LMNA
SCHEMBL21811662 0.78
SCHEMBL29113359 0.78 KEAP1 (0.50) KEAP1SMN1; SMN2HPGDDUSP3LMNA
SCHEMBL9517618 0.78 KEAP1 (0.50) KEAP1SMN1; SMN2HPGDDUSP3LMNA
SCHEMBL26668773 0.77 KEAP1 (0.54) KEAP1SMN1; SMN2HPGDDUSP3LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed