SCHEMBL3481748

SCHEMBL3481748

CO[SiH2]c1cc(C)cc(C)c1

nearest known ligand 0.36

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.36
TSHR P16473 2/20 0.36
ACHE P22303 2/20 0.35
CYP3A4 P08684 1/20 0.32
MAPK1 P28482 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
PGK1 P00558 1/20 0.30
PGK2 P07205 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28784155 0.85 ALDH1A1 (0.31) ALDH1A1TSHRACHE
SCHEMBL27542514 0.76 ALDH1A1 (0.35) ALDH1A1TSHRCYP3A4MAPK1TDP1
SCHEMBL27923927 0.76 TUBB1 (0.33)
SCHEMBL2873305 0.72 ACHE (0.44) ALDH1A1TSHRACHECYP3A4TDP1
SCHEMBL3482534 0.72 ALDH1A1 (0.32) ALDH1A1TSHRSMN1; SMN2
Methoxymethane SCHEMBL27501177 0.71 ALDH1A1 (0.53) ALDH1A1TSHRACHECYP3A4MAPK1
SCHEMBL3482012 0.70 RAPGEF4 (0.36) ALDH1A1ACHE
SCHEMBL26115 0.67
SCHEMBL341533 0.67 ALDH1A1 (0.67) ALDH1A1TSHRACHECYP3A4MAPK1
SCHEMBL8579309 0.65 TDP1 (0.46) ALDH1A1TSHRACHECYP3A4MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109320720-A A kind of anhydrous synthesis preparation method of MQ type organic siliconresin 深圳市广业电子科技有限公司 2019-02-12 CN claimed
CN-104961897-B A kind of preparation method of phenylalkyl silicone oil 浙江大学 2017-11-17 CN claimed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed