SCHEMBL3481777

SCHEMBL3481777

Cc1cc(-c2ccccc2)cc(C)c1[SiH](Cl)Cl

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
BRD4 O60885 1/20 0.40
ALDH1A1 P00352 2/20 0.39
KDM4E B2RXH2 2/20 0.37
HTT P42858 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
RAB9A P51151 2/20 0.36
NPC1 O15118 1/20 0.36
CYP1A2 P05177 1/20 0.36
ESR2 Q92731 1/20 0.35
PPARG P37231 2/20 0.35
PPARA Q07869 2/20 0.35
CRHBP P24387 1/20 0.34
CRHR2 Q13324 1/20 0.34
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
LMNA P02545 2/20 0.33
TNKS2 Q9H2K2 1/20 0.33
ATM Q13315 1/20 0.33
HSD17B1 P14061 1/20 0.33
HSD17B2 P37059 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482386 0.78 BRD4 (0.40) BRD4ALDH1A1KDM4EHTTSMN1; SMN2
SCHEMBL3482478 0.75 BRD4 (0.38) BRD4ALDH1A1KDM4EHTTSMN1; SMN2
SCHEMBL19431477 0.74 ALDH1A1 (0.50) BRD4ALDH1A1KDM4EHTTSMN1; SMN2
Biphenyl SCHEMBL14656679 0.70 ALDH1A1 (0.60) BRD4ALDH1A1KDM4EHTTSMN1; SMN2
Biphenyl SCHEMBL27883306 0.70 ALDH1A1 (0.60) ALDH1A1SMN1; SMN2RAB9ANPC1CYP1A2
SCHEMBL10390024 0.70 ESR2 (0.48) BRD4ALDH1A1KDM4EHTTSMN1; SMN2
SCHEMBL29865334 0.70 ALDH1A1 (0.45) BRD4ALDH1A1KDM4EHTTSMN1; SMN2
SCHEMBL411275 0.70 CA1 (0.70) BRD4ALDH1A1HTTCYP1A2ESR2
SCHEMBL807863 0.70 ALDH1A1 (0.70) BRD4ALDH1A1KDM4EHTTSMN1; SMN2
SCHEMBL446420 0.70 CRHBP (0.48) BRD4ALDH1A1KDM4EHTTSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed