SCHEMBL3482386

SCHEMBL3482386

Cc1cc(-c2ccccc2)cc(C)c1[SiH](O)O

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
BRD4 O60885 1/20 0.40
ESR2 Q92731 1/20 0.39
ALDH1A1 P00352 1/20 0.39
CRHBP P24387 1/20 0.39
CRHR2 Q13324 1/20 0.39
PPARG P37231 1/20 0.38
PPARA Q07869 1/20 0.38
SMN1; SMN2 Q16637 2/20 0.37
KDM4E B2RXH2 1/20 0.37
HTT P42858 1/20 0.37
HSD17B1 P14061 1/20 0.37
HSD17B2 P37059 1/20 0.37
EGFR P00533 1/20 0.37
CA1 P00915 1/20 0.37
CA2 P00918 1/20 0.37
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
PTGS1 P23219 1/20 0.36
MMP3 P08254 1/20 0.36
BCL2L1 Q07817 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481777 0.78 BRD4 (0.40) BRD4ESR2ALDH1A1CRHBPCRHR2
SCHEMBL3482478 0.75 BRD4 (0.38) BRD4ESR2ALDH1A1CRHBPCRHR2
SCHEMBL411275 0.75 CA1 (0.70) BRD4ESR2ALDH1A1CRHBPCRHR2
SCHEMBL19431477 0.74 ALDH1A1 (0.50) BRD4ESR2ALDH1A1CRHBPCRHR2
SCHEMBL3481504 0.72 PPARG (0.38) BRD4ESR2ALDH1A1PPARGPPARA
SCHEMBL431299 0.71 MGLL (0.48) BRD4ESR2ALDH1A1CRHBPCRHR2
SCHEMBL3482381 0.71 RAPGEF4 (0.39) ALDH1A1KDM4ECA1CA2MAPT
Biphenyl SCHEMBL14656679 0.70 ALDH1A1 (0.60) BRD4ESR2ALDH1A1SMN1; SMN2KDM4E
SCHEMBL446420 0.70 CRHBP (0.48) BRD4ESR2ALDH1A1CRHBPCRHR2
SCHEMBL807863 0.70 ALDH1A1 (0.70) BRD4ESR2ALDH1A1CRHBPCRHR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed