SCHEMBL3482478

SCHEMBL3482478

CO[SiH](OC)c1c(C)cc(-c2ccccc2)cc1C

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
BRD4 O60885 1/20 0.38
MAPT P10636 3/20 0.37
MEN1 O00255 2/20 0.37
KMT2A Q03164 2/20 0.37
TSHR P16473 1/20 0.37
ATM Q13315 1/20 0.37
PPARG P37231 2/20 0.36
PPARA Q07869 2/20 0.36
ALDH1A1 P00352 2/20 0.36
KDM4E B2RXH2 3/20 0.35
HTT P42858 2/20 0.35
SMN1; SMN2 Q16637 2/20 0.35
NPC1 O15118 3/20 0.34
RAB9A P51151 3/20 0.34
CNR1 P21554 2/20 0.34
CNR2 P34972 2/20 0.34
ESR2 Q92731 1/20 0.33
GAA P10253 1/20 0.33
HPGD P15428 1/20 0.33
MITF O75030 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482223 0.79 PPARG (0.37) BRD4MAPTPPARGPPARAALDH1A1
SCHEMBL3481504 0.77 PPARG (0.38) BRD4MAPTPPARGPPARAALDH1A1
SCHEMBL3482386 0.75 BRD4 (0.40) BRD4MAPTPPARGPPARAALDH1A1
SCHEMBL3481777 0.75 BRD4 (0.40) BRD4MAPTMEN1KMT2AATM
SCHEMBL411675 0.72 CNR1 (0.49) BRD4MAPTMEN1KMT2ATSHR
SCHEMBL28873235 0.71 DPP4 (0.39) MAPTMEN1KMT2ATSHRATM
SCHEMBL19431477 0.71 ALDH1A1 (0.50) BRD4MAPTMEN1KMT2ATSHR
SCHEMBL27762993 0.70 ALDH1A1 (0.43) MAPTALDH1A1SMN1; SMN2CYP1A1CYP1A2
Biphenyl SCHEMBL1048244 0.68 ALDH1A1 (0.53) MAPTMEN1KMT2ATSHRATM
Biphenyl SCHEMBL14656679 0.67 ALDH1A1 (0.60) BRD4MAPTMEN1KMT2ATSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed