SCHEMBL3481784

SCHEMBL3481784

O[Si]([SiH3])(Cc1ccccc1)Cc1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.43
CALM1 P0DP23 1/20 0.41
TDP1 Q9NUW8 1/20 0.40
IDO1 P14902 2/20 0.39
THRB P10828 1/20 0.39
CES2 O00748 1/20 0.39
CES1 P23141 1/20 0.39
AKR1B1 P15121 1/20 0.39
ALDH1A1 P00352 2/20 0.38
TP53 P04637 1/20 0.38
LOXL2 Q9Y4K0 1/20 0.38
TRPA1 O75762 1/20 0.38
NR1H2 P55055 2/20 0.37
NR1H3 Q13133 2/20 0.37
MAOB P27338 1/20 0.36
HPGD P15428 1/20 0.36
ALOX15 P16050 1/20 0.36
ALOX12 P18054 1/20 0.36
CASP1 P29466 1/20 0.36
HSD17B10 Q99714 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9422247 0.78 CALM1 (0.45) TSHRCALM1TDP1IDO1THRB
SCHEMBL379345 0.78 TSHR (0.48) TSHRCALM1TDP1IDO1THRB
SCHEMBL4526742 0.78 TSHR (0.48) TSHRCALM1TDP1IDO1THRB
SCHEMBL9622630 0.78 TSHR (0.48) TSHRCALM1TDP1IDO1THRB
SCHEMBL679387 0.74 TSHR (0.43) TSHRCALM1TDP1IDO1THRB
SCHEMBL28136682 0.74 TSHR (0.43) TSHRCALM1TDP1IDO1THRB
SCHEMBL4514772 0.74 TSHR (0.43) TSHRCALM1TDP1IDO1THRB
SCHEMBL8726144 0.73 IDO1 (0.39) TSHRCALM1TDP1IDO1THRB
SCHEMBL15302661 0.72 TSHR (0.48) TSHRCALM1TDP1IDO1THRB
SCHEMBL1107767 0.72 TP53 (0.48) TSHRCALM1TDP1IDO1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed