SCHEMBL3481956

SCHEMBL3481956

CCCCCCC(CCCc1ccccc1)O[SiH3]

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 1/20 0.47
HTR2A P28223 1/20 0.45
CSNK1E P49674 1/20 0.44
SIGMAR1 Q99720 6/20 0.44
CETP P11597 1/20 0.42
CNR2 P34972 1/20 0.40
KDM4E B2RXH2 1/20 0.40
ALDH1A1 P00352 1/20 0.40
LMNA P02545 1/20 0.40
ESR1 P03372 1/20 0.40
SHBG P04278 1/20 0.40
TP53 P04637 1/20 0.40
CYP3A4 P08684 1/20 0.40
ADRA2A P08913 1/20 0.40
ADORA3 P0DMS8 1/20 0.40
HSPD1 P10809 1/20 0.40
ADRB3 P13945 1/20 0.40
TACR2 P21452 1/20 0.40
SLC6A2 P23975 1/20 0.40
HTR2C P28335 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481657 0.98 KCNH2 (0.45) KCNH2HTR2ACSNK1ESIGMAR1CETP
SCHEMBL3482058 0.93 CTSK (0.43) KCNH2HTR2ASIGMAR1ADRA2ASLC6A2
SCHEMBL4022054 0.83 KCNH2 (0.54) KCNH2HTR2ACSNK1ESIGMAR1KDM4E
SCHEMBL1840717 0.80 ALDH1A1 (0.47) KCNH2CSNK1ECETPCNR2ALDH1A1
SCHEMBL1842490 0.80 ALDH1A1 (0.47) KCNH2CSNK1ECETPCNR2ALDH1A1
SCHEMBL1835287 0.80 ALDH1A1 (0.47) KCNH2CSNK1ECETPCNR2ALDH1A1
SCHEMBL3481810 0.80 SIGMAR1 (0.42) SIGMAR1
SCHEMBL27984757 0.80 KCNH2 (0.53) KCNH2HTR2ACSNK1ESIGMAR1CETP
SCHEMBL3322171 0.80 KCNH2 (0.53) KCNH2HTR2ACSNK1ESIGMAR1CETP
SCHEMBL27952343 0.80 KCNH2 (0.53) KCNH2HTR2ACSNK1ESIGMAR1CETP

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed