SCHEMBL3481657

SCHEMBL3481657

CCCCCC(CCCc1ccccc1)O[SiH3]

nearest known ligand 0.55

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 2/20 0.45
SIGMAR1 Q99720 4/20 0.45
HTR2A P28223 1/20 0.43
CSNK1E P49674 1/20 0.42
CNR2 P34972 1/20 0.41
CETP P11597 1/20 0.40
CHRM2 P08172 1/20 0.40
HTR1A P08908 1/20 0.40
ADRA2A P08913 1/20 0.40
CHRM1 P11229 1/20 0.40
DRD1 P21728 1/20 0.40
SLC6A2 P23975 1/20 0.40
SLC6A4 P31645 1/20 0.40
ADRA1A P35348 1/20 0.40
OPRM1 P35372 1/20 0.40
DRD3 P35462 1/20 0.40
SLC6A3 Q01959 1/20 0.40
CTSK P43235 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481956 0.98 KCNH2 (0.47) KCNH2SIGMAR1HTR2ACSNK1ECNR2
SCHEMBL3482058 0.95 CTSK (0.43) KCNH2SIGMAR1HTR2ACHRM2HTR1A
SCHEMBL4022054 0.81 KCNH2 (0.54) KCNH2SIGMAR1HTR2ACSNK1ECHRM2
SCHEMBL3481810 0.81 SIGMAR1 (0.42) SIGMAR1
SCHEMBL1835288 0.80 CNR2 (0.48) CNR2CETPCTSK
SCHEMBL30725931 0.80 KCNH2 (0.42) KCNH2SIGMAR1HTR2ACSNK1ECNR2
SCHEMBL1835287 0.78 ALDH1A1 (0.47) KCNH2CSNK1ECNR2CETPCTSK
SCHEMBL1842490 0.78 ALDH1A1 (0.47) KCNH2CSNK1ECNR2CETPCTSK
SCHEMBL1840717 0.78 ALDH1A1 (0.47) KCNH2CSNK1ECNR2CETPCTSK
SCHEMBL4770413 0.78 OPRM1 (0.42) OPRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed