SCHEMBL3481959

SCHEMBL3481959

CCCC[SiH](CCCc1ccccc1)OCCC

nearest known ligand 0.55

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 1/20 0.42
KCNH2 Q12809 2/20 0.41
SIGMAR1 Q99720 2/20 0.41
CHRM2 P08172 1/20 0.40
HTR1A P08908 1/20 0.40
ADRA2A P08913 1/20 0.40
CHRM1 P11229 1/20 0.40
DRD1 P21728 1/20 0.40
SLC6A2 P23975 1/20 0.40
SLC6A4 P31645 1/20 0.40
ADRA1A P35348 1/20 0.40
OPRM1 P35372 1/20 0.40
DRD3 P35462 1/20 0.40
SLC6A3 Q01959 1/20 0.40
HRH3 Q9Y5N1 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708791 0.92 IDO1 (0.47) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL702998 0.90 KCNH2 (0.45) IDO1KCNH2SIGMAR1L3MBTL1
SCHEMBL705824 0.90 SIGMAR1 (0.43) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL3481662 0.88 KCNH2 (0.42) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL3482224 0.85 IDO1 (0.44) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL3481843 0.83 SIGMAR1 (0.41) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL708505 0.83 IDO1 (0.48) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL3482065 0.83 KCNH2 (0.44) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL702245 0.83 IDO1 (0.44) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL706398 0.81 SIGMAR1 (0.44) IDO1KCNH2SIGMAR1CHRM2HTR1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed