SCHEMBL702998

SCHEMBL702998

CCCC[SiH](CCCC)OCCCCc1ccccc1

nearest known ligand 0.55

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 1/20 0.45
SIGMAR1 Q99720 2/20 0.42
IDO1 P14902 1/20 0.42
L3MBTL1 Q9Y468 2/20 0.41
TDP1 Q9NUW8 1/20 0.41
MAOA P21397 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708791 0.95 IDO1 (0.47) KCNH2SIGMAR1IDO1
SCHEMBL706398 0.92 SIGMAR1 (0.44) KCNH2SIGMAR1IDO1L3MBTL1TDP1
SCHEMBL3481959 0.90 IDO1 (0.42) KCNH2SIGMAR1IDO1L3MBTL1
SCHEMBL705824 0.90 SIGMAR1 (0.43) KCNH2SIGMAR1IDO1TDP1
SCHEMBL3482224 0.89 IDO1 (0.44) KCNH2SIGMAR1IDO1
SCHEMBL708505 0.86 IDO1 (0.48) KCNH2SIGMAR1IDO1L3MBTL1
SCHEMBL3481662 0.85 KCNH2 (0.42) KCNH2SIGMAR1IDO1L3MBTL1
SCHEMBL706330 0.84 IDO1 (0.46) KCNH2SIGMAR1IDO1L3MBTL1TDP1
SCHEMBL3481843 0.83 SIGMAR1 (0.41) KCNH2SIGMAR1IDO1
SCHEMBL3482262 0.80 IDO1 (0.46) KCNH2SIGMAR1IDO1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed