Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.43 |
| ▸ | KCNH2 | Q12809 | 2/20 | 0.40 |
| ▸ | IDO1 | P14902 | 1/20 | 0.40 |
| ▸ | PTGES | O14684 | 2/20 | 0.39 |
| ▸ | ALOX5 | P09917 | 2/20 | 0.39 |
| ▸ | PPARG | P37231 | 2/20 | 0.39 |
| ▸ | CTSK | P43235 | 1/20 | 0.39 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | NPC1 | O15118 | 1/20 | 0.38 |
| ▸ | RAB9A | P51151 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
| ▸ | CETP | P11597 | 1/20 | 0.38 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.38 |
| ▸ | HTR1A | P08908 | 1/20 | 0.38 |
| ▸ | ADRA2A | P08913 | 1/20 | 0.38 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.38 |
| ▸ | DRD1 | P21728 | 1/20 | 0.38 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.38 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.38 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3481843 | 0.93 | SIGMAR1 (0.41) | SIGMAR1KCNH2IDO1PTGESALOX5 | |
| SCHEMBL708791 | 0.91 | IDO1 (0.47) | SIGMAR1KCNH2IDO1CTSKCHRM2 | |
| SCHEMBL702998 | 0.90 | KCNH2 (0.45) | SIGMAR1KCNH2IDO1TDP1 | |
| SCHEMBL3481959 | 0.90 | IDO1 (0.42) | SIGMAR1KCNH2IDO1CHRM2HTR1A | |
| SCHEMBL707033 | 0.89 | TDP1 (0.40) | SIGMAR1KCNH2IDO1NPC1RAB9A | |
| SCHEMBL3482224 | 0.85 | IDO1 (0.44) | SIGMAR1KCNH2IDO1CTSKCHRM2 | |
| SCHEMBL3482122 | 0.84 | SIGMAR1 (0.42) | SIGMAR1KCNH2IDO1PTGESALOX5 | |
| SCHEMBL3481662 | 0.84 | KCNH2 (0.42) | SIGMAR1KCNH2IDO1MEN1KMT2A | |
| SCHEMBL708505 | 0.82 | IDO1 (0.48) | SIGMAR1KCNH2IDO1CHRM2HTR1A | |
| SCHEMBL3481879 | 0.82 | TDP1 (0.38) | SIGMAR1KCNH2IDO1NPC1RAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |