SCHEMBL3482030

SCHEMBL3482030

Cc1ccc(C(C)C(O[SiH3])(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
KEAP1 Q14145 1/20 0.37
NFE2L2 Q16236 1/20 0.37
KIF11 P52732 8/20 0.33
LMNA P02545 3/20 0.33
TSHR P16473 1/20 0.33
ALOX12 P18054 1/20 0.33
ACHE P22303 1/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
NPSR1 Q6W5P4 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
KDM4E B2RXH2 1/20 0.32
ALDH1A1 P00352 1/20 0.32
MAPK1 P28482 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3867727 0.91 TSHR (0.37) TSHRACHE
SCHEMBL703112 0.89 MAPK1 (0.35) KIF11LMNAKDM4EALDH1A1MAPK1
SCHEMBL703675 0.75 CYP2D6 (0.39) KIF11TSHRALDH1A1MAPK1
SCHEMBL6277396 0.74 KEAP1 (0.40) KEAP1NFE2L2KIF11LMNATSHR
SCHEMBL10604514 0.72 TSHR (0.39) KIF11LMNATSHRALDH1A1MAPK1
SCHEMBL23701255 0.72 MAPK1 (0.37) TSHRALDH1A1MAPK1
SCHEMBL5024571 0.72 CYP1A2 (0.37) KIF11LMNAKDM4EALDH1A1MAPK1
SCHEMBL23701218 0.72 MAPK1 (0.37) TSHRALDH1A1MAPK1
SCHEMBL3481706 0.72 CHRNA7 (0.35) TSHRACHE
SCHEMBL4459726 0.71 MAPK1 (0.35) KIF11LMNAKDM4EALDH1A1MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed