SCHEMBL3482034

SCHEMBL3482034

CCc1ccc(C)cc1[SiH](O)O

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SRC P12931 1/20 0.37
MAPT P10636 1/20 0.36
RXFP1 Q9HBX9 1/20 0.36
CYP1A2 P05177 2/20 0.34
CYP2C9 P11712 1/20 0.34
CYP2C19 P33261 1/20 0.34
SMN1; SMN2 Q16637 3/20 0.33
AMY1A P0DUB6 1/20 0.33
TRPA1 O75762 1/20 0.33
KDM4E B2RXH2 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
NQO1 P15559 1/20 0.33
POR P16435 1/20 0.33
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
TP53 P04637 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
GABRA1 P14867 1/20 0.32
GABRB2 P47870 1/20 0.32
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482374 0.79 MAPT (0.40) SRCMAPTRXFP1CYP1A2CYP2C9
SCHEMBL3481714 0.76 KDM4E (0.37) SRCMAPTRXFP1CYP1A2CYP2C9
SCHEMBL3481563 0.76 KDM4E (0.35) SRCMAPTRXFP1CYP1A2CYP2C9
SCHEMBL3482145 0.75 CYP1A2 (0.35) SRCMAPTRXFP1CYP1A2CYP2C9
SCHEMBL598593 0.74 TAAR1 (0.44) SRCMAPTRXFP1CYP1A2CYP2C9
SCHEMBL3482627 0.73 BCL2 (0.46) MAPTCYP1A2SMN1; SMN2L3MBTL1ALDH1A1
Methane SCHEMBL27570896 0.72 TAAR1 (0.43) SRCMAPTRXFP1CYP1A2CYP2C9
SCHEMBL1917938 0.71 GABRA1 (0.46) MAPTL3MBTL1TP53GABRA1GABRB2
SCHEMBL4547157 0.71 MAPT (0.41) SRCMAPTRXFP1CYP1A2CYP2C19
SCHEMBL12345571 0.71 AMY1A (0.41) SRCMAPTRXFP1CYP1A2CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed