SCHEMBL3481563

SCHEMBL3481563

CCCO[SiH](OCCC)c1cc(C)ccc1CC

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 4/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
MAPT P10636 4/20 0.34
ALDH1A1 P00352 4/20 0.34
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
POLB P06746 1/20 0.34
GPR55 Q9Y2T6 1/20 0.34
CYP1A2 P05177 1/20 0.33
CYP2C9 P11712 1/20 0.33
CYP2C19 P33261 1/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
SRC P12931 1/20 0.33
LMNA P02545 1/20 0.32
TSHR P16473 1/20 0.32
RXFP1 Q9HBX9 1/20 0.32
GAA P10253 2/20 0.32
MAPK1 P28482 1/20 0.32
HSD17B10 Q99714 1/20 0.31
KDM5A P29375 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482145 0.86 CYP1A2 (0.35) KDM4EL3MBTL1MAPTALDH1A1POLB
SCHEMBL3481714 0.80 KDM4E (0.37) KDM4EL3MBTL1MAPTALDH1A1CYP1A2
SCHEMBL3482332 0.78 BCL2 (0.41) L3MBTL1MAPTALDH1A1CYP1A2SMN1; SMN2
SCHEMBL4281348 0.77 ALDH1A1 (0.40) L3MBTL1MAPTALDH1A1MEN1KMT2A
SCHEMBL3482034 0.76 SRC (0.37) KDM4EL3MBTL1MAPTALDH1A1MEN1
SCHEMBL3482374 0.72 MAPT (0.40) KDM4EL3MBTL1MAPTALDH1A1POLB
SCHEMBL3481812 0.70 ACHE (0.35) L3MBTL1MAPTALDH1A1MEN1KMT2A
SCHEMBL2961139 0.69 ALDH1A1 (0.42) L3MBTL1MAPTALDH1A1MEN1KMT2A
SCHEMBL10584009 0.68 TYR (0.36) L3MBTL1ALDH1A1MEN1KMT2ACYP1A2
SCHEMBL598593 0.68 TAAR1 (0.44) KDM4EL3MBTL1MAPTCYP1A2CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed