SCHEMBL3482145

SCHEMBL3482145

CCO[SiH](OCC)c1cc(C)ccc1CC

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.35
CYP2C9 P11712 1/20 0.35
CYP2C19 P33261 1/20 0.35
SMN1; SMN2 Q16637 3/20 0.34
MAPT P10636 2/20 0.33
KDM4E B2RXH2 2/20 0.33
RXFP1 Q9HBX9 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
ALDH1A1 P00352 2/20 0.31
HSD17B10 Q99714 2/20 0.31
HPGD P15428 1/20 0.31
RAB9A P51151 1/20 0.31
POLB P06746 1/20 0.31
SRC P12931 1/20 0.31
NLRP3 Q96P20 1/20 0.30
NQO1 P15559 1/20 0.30
POR P16435 1/20 0.30
TSHR P16473 1/20 0.30
CASP1 P29466 1/20 0.30
CASP7 P55210 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481563 0.86 KDM4E (0.35) CYP1A2CYP2C9CYP2C19SMN1; SMN2MAPT
SCHEMBL3481714 0.83 KDM4E (0.37) CYP1A2CYP2C9CYP2C19SMN1; SMN2MAPT
SCHEMBL22551442 0.78 CYP1A2 (0.32) CYP1A2CYP2C9CYP2C19SMN1; SMN2
SCHEMBL3482703 0.76 RXRA (0.40) SMN1; SMN2MAPTL3MBTL1HPGDRAB9A
SCHEMBL3482374 0.75 MAPT (0.40) CYP1A2CYP2C9CYP2C19SMN1; SMN2MAPT
SCHEMBL4267871 0.75 MAPT (0.40) MAPTL3MBTL1HPGDNLRP3TSHR
SCHEMBL3482034 0.75 SRC (0.37) CYP1A2CYP2C9CYP2C19SMN1; SMN2MAPT
SCHEMBL28008293 0.70 TAAR1 (0.44) CYP1A2CYP2C9CYP2C19SMN1; SMN2MAPT
SCHEMBL2864305 0.70
SCHEMBL598593 0.70 TAAR1 (0.44) CYP1A2CYP2C9CYP2C19SMN1; SMN2MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed