SCHEMBL3482374

SCHEMBL3482374

CCc1ccc(C)cc1[SiH](Cl)Cl

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 2/20 0.40
RXFP1 Q9HBX9 1/20 0.40
SRC P12931 1/20 0.33
KDM4E B2RXH2 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
NQO1 P15559 1/20 0.33
POR P16435 1/20 0.33
CYP1A2 P05177 3/20 0.32
CYP2A6 P11509 2/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
HSD17B10 Q99714 1/20 0.32
TAAR1 Q96RJ0 1/20 0.31
CTRC Q99895 1/20 0.31
CYP2C9 P11712 1/20 0.31
CYP2C19 P33261 1/20 0.31
PTGS2 P35354 2/20 0.30
NR3C1 P04150 1/20 0.30
PGR P06401 1/20 0.30
NR3C2 P08235 1/20 0.30
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482034 0.79 SRC (0.37) MAPTRXFP1SRCKDM4EL3MBTL1
SCHEMBL3481714 0.76 KDM4E (0.37) MAPTRXFP1SRCKDM4EL3MBTL1
SCHEMBL3482145 0.75 CYP1A2 (0.35) MAPTRXFP1SRCKDM4EL3MBTL1
SCHEMBL598593 0.74 TAAR1 (0.44) MAPTRXFP1SRCKDM4EL3MBTL1
SCHEMBL3482584 0.73 BCL2 (0.42) MAPTL3MBTL1CYP1A2SMN1; SMN2PTGS2
Methane SCHEMBL27570896 0.72 TAAR1 (0.43) MAPTRXFP1SRCKDM4EL3MBTL1
SCHEMBL3481563 0.72 KDM4E (0.35) MAPTRXFP1SRCKDM4EL3MBTL1
SCHEMBL115194 0.71 MGLL (0.42) MAPTL3MBTL1ALDH1A1LMNA
SCHEMBL8230054 0.71 GRIN2D (0.41) MAPTRXFP1SRCL3MBTL1CYP1A2
SCHEMBL4547157 0.71 MAPT (0.41) MAPTRXFP1SRCKDM4EL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed