SCHEMBL3482703

SCHEMBL3482703

CCO[SiH](OCC)c1cc(-c2ccccc2)ccc1CC

nearest known ligand 0.40

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
RXRA P19793 1/20 0.40
RXRB P28702 1/20 0.40
BCL2 P10415 1/20 0.40
SMN1; SMN2 Q16637 2/20 0.35
L3MBTL1 Q9Y468 2/20 0.35
MAPT P10636 1/20 0.35
NPC1 O15118 1/20 0.35
RAB9A P51151 1/20 0.35
DCLRE1A Q6PJP8 1/20 0.34
DCLRE1B Q9H816 1/20 0.34
SRD5A2 P31213 1/20 0.34
PTGS2 P35354 1/20 0.33
HPGD P15428 1/20 0.33
EGFR P00533 1/20 0.33
DHODH Q02127 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482332 0.88 BCL2 (0.41) RXRARXRBBCL2SMN1; SMN2L3MBTL1
SCHEMBL3482005 0.85 BCL2 (0.41) RXRARXRBBCL2SMN1; SMN2L3MBTL1
SCHEMBL3482627 0.78 BCL2 (0.46) RXRARXRBBCL2SMN1; SMN2L3MBTL1
SCHEMBL3482584 0.78 BCL2 (0.42) RXRARXRBBCL2SMN1; SMN2L3MBTL1
SCHEMBL4267871 0.77 MAPT (0.40) L3MBTL1MAPTHPGD
SCHEMBL3482145 0.76 CYP1A2 (0.35) SMN1; SMN2L3MBTL1MAPTRAB9AHPGD
SCHEMBL16487201 0.73 TAAR1 (0.40) RXRARXRBSMN1; SMN2L3MBTL1MAPT
SCHEMBL30380433 0.73 DCLRE1A (0.47) BCL2SMN1; SMN2L3MBTL1MAPTNPC1
SCHEMBL28992451 0.73 DCLRE1A (0.47) BCL2SMN1; SMN2L3MBTL1MAPTNPC1
SCHEMBL2961096 0.70 ALDH1A1 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed