SCHEMBL523394

SCHEMBL523394

Cl[SiH](Cl)CCCc1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 5/20 0.48
MAOA P21397 1/20 0.48
MAOB P27338 2/20 0.46
HTR2A P28223 1/20 0.46
IDO1 P14902 1/20 0.45
HDAC3 O15379 1/20 0.45
MAPK1 P28482 1/20 0.45
ADRA1A P35348 1/20 0.45
HDAC4 P56524 1/20 0.45
SLC6A3 Q01959 1/20 0.45
HDAC1 Q13547 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
HDAC7 Q8WUI4 1/20 0.45
HDAC2 Q92769 1/20 0.45
HDAC10 Q969S8 1/20 0.45
HDAC11 Q96DB2 1/20 0.45
HDAC8 Q9BY41 1/20 0.45
HDAC6 Q9UBN7 1/20 0.45
HDAC9 Q9UKV0 1/20 0.45
HDAC5 Q9UQL6 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707928 0.93 MAOA (0.52) SIGMAR1MAOAMAOBHTR2AL3MBTL1
SCHEMBL1204280 0.91 SIGMAR1 (0.52) SIGMAR1MAOAMAOBL3MBTL1
SCHEMBL20483304 0.91 SIGMAR1 (0.52) SIGMAR1MAOAMAOBL3MBTL1
SCHEMBL19470836 0.91 SIGMAR1 (0.52) SIGMAR1MAOAMAOBL3MBTL1
SCHEMBL19470869 0.91 SIGMAR1 (0.52) SIGMAR1MAOAMAOBL3MBTL1
SCHEMBL19470860 0.91 SIGMAR1 (0.52) SIGMAR1MAOAMAOBL3MBTL1
SCHEMBL19470855 0.91 SIGMAR1 (0.52) SIGMAR1MAOAMAOBL3MBTL1
SCHEMBL20483345 0.91 SIGMAR1 (0.52) SIGMAR1MAOAMAOBL3MBTL1
SCHEMBL19470817 0.91 SIGMAR1 (0.52) SIGMAR1MAOAMAOBL3MBTL1
SCHEMBL297259 0.85 ALDH1A1 (0.48) SIGMAR1MAOAMAOBHTR2AIDO1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 197 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2014170799-A1 CROSSLINKABLE VARNISH AND METHOD FOR APPLYING SAME COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (FR) 2014-10-23 WO claimed
US-20130153263-A1 INORGANIC NANOFILLER, PARTIAL DISCHARGE RESISTANT ENAMELED WIRE INCLUDING THE SAME, AND PREPARING METHOD OF THE ENAMELED WIRE SEJONG UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION (KR) 2013-06-20 US claimed
US-7704432-B2 Imprint lithographic method for making a polymeric structure AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) 2010-04-27 US claimed
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
US-20250377596-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 US disclosed
US-20250355357-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-11-20 US disclosed
US-20250348001-A1 METHOD FOR PRODUCING LAMINATE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT NISSAN CHEMICAL CORPORATION (JP) 2025-11-13 US disclosed
US-12339586-B2 Photocurable resin composition containing self-crosslinkable polymer NISSAN CHEMICAL CORPORATION (JP) 2025-06-24 US disclosed
US-20250172869-A1 WAFER END PROTECTIVE-FILM FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING NISSAN CHEMICAL CORPORATION (JP) 2025-05-29 US disclosed
US-5869724-A REAGENTS FOR MODIFYING THE SURFACE OF LIQUID CHROMATOGRAPHY SUPPORTS HEWLETT-PACKARD COMPANY (US) 1999-02-09 US disclosed
EP-0617073-B1 Poly(silyleneethynylene phenyleneethynylenes), method for preparing same and hardened product thereof MITSUI CHEMICALS INC (JP) 1998-12-09 EP disclosed
US-5420238-A Heat resistant MITSUI TOATSU CHEMICALS, INC. (JP) 1995-05-30 US disclosed
EP-0617073-A2 Poly(silyleneethynylene phenyleneethynylenes), method for preparing same and hardened product thereof MITSUI TOATSU CHEMICALS, Inc. (JP) 1994-09-28 EP disclosed
EP-0154519-B1 PHOTOACTIVATED POLYMERIZATION OF VINYL MONOMER IN THE PRESENCE OF POLYSILANES AND AMINES MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1988-08-03 EP disclosed
US-4569953-A Photoactivated polymerization of vinyl monomers by polysilanes MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1986-02-11 US disclosed
US-4548690-A HIGH SPEED CURING IN THE PRESENCE OF OXYGEN PROTECTIVE COATINGS MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1985-10-22 US disclosed
EP-0154519-A2 Photoactivated polymerization of vinyl monomer in the presence of polysilanes and amines MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1985-09-11 EP disclosed
US-4417069-A FROM STYRENE AND CHLOROSILANE, PLATINUM CATALYST AND TERTIARY AMINE GENERAL ELECTRIC COMPANY (US) 1983-11-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 SIGMAR1 1321/4885MAOA 2652/4885MAOB 3748/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L SIGMAR1 467/4885MAOA 2131/4885MAOB 1541/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.