SCHEMBL3482328

SCHEMBL3482328

CCc1ccc([SiH2]OCc2ccccc2)cc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.52
TSHR P16473 1/20 0.40
RXRA P19793 1/20 0.40
RXRB P28702 1/20 0.40
L3MBTL1 Q9Y468 3/20 0.38
MAPT P10636 2/20 0.38
ALDH1A1 P00352 3/20 0.38
IDO1 P14902 1/20 0.38
PPARG P37231 1/20 0.37
PPARA Q07869 1/20 0.37
LTA4H P09960 1/20 0.37
AGXT P21549 1/20 0.36
LIPE Q05469 1/20 0.36
LPL P06858 1/20 0.35
LIPG Q9Y5X9 1/20 0.35
TDP1 Q9NUW8 2/20 0.35
SLC6A2 P23975 1/20 0.35
SLC6A3 Q01959 1/20 0.35
KMT2A Q03164 1/20 0.35
MAPK1 P28482 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18297892 0.84 TSHR (0.50) TSHRL3MBTL1MAPTALDH1A1IDO1
SCHEMBL3482384 0.82 TP53 (0.48) TP53IDO1PPARGPPARAKMT2A
SCHEMBL3481542 0.80 TP53 (0.45) TP53L3MBTL1IDO1TDP1SLC6A2
SCHEMBL3481907 0.78 LPL (0.41) TP53TSHRL3MBTL1ALDH1A1IDO1
SCHEMBL3482498 0.77 TP53 (0.42) TP53TSHRL3MBTL1MAPTALDH1A1
SCHEMBL3482165 0.75 CYP19A1 (0.40) TP53L3MBTL1PPARGPPARASLC6A2
SCHEMBL3482609 0.75 LPL (0.39) TP53TSHRL3MBTL1MAPTALDH1A1
Ethylbenzene SCHEMBL27405402 0.74 TP53 (0.93) TP53TSHRALDH1A1PPARGPPARA
SCHEMBL3482493 0.74 TACR1 (0.41) TSHRL3MBTL1MAPTALDH1A1IDO1
SCHEMBL3482509 0.73 TP53 (0.45) TP53TSHRL3MBTL1ALDH1A1PPARG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed