SCHEMBL3482384

SCHEMBL3482384

CCc1ccc([SiH2]OCCc2ccccc2)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.48
CHRNB4 P30926 1/20 0.40
CHRNA3 P32297 1/20 0.40
CHRNA7 P36544 1/20 0.40
TAAR1 Q96RJ0 1/20 0.38
MEN1 O00255 1/20 0.36
KMT2A Q03164 1/20 0.36
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
CA9 Q16790 1/20 0.36
PPARG P37231 1/20 0.36
PPARA Q07869 1/20 0.36
IDO1 P14902 1/20 0.35
NPC1 O15118 1/20 0.35
RAB9A P51151 1/20 0.35
FFAR1 O14842 1/20 0.35
ESR1 P03372 1/20 0.35
ESR2 Q92731 1/20 0.35
MMP1 P03956 1/20 0.35
MMP2 P08253 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481542 0.90 TP53 (0.45) TP53CHRNB4CHRNA3CHRNA7MEN1
SCHEMBL27560150 0.85 CA1 (0.42) TAAR1CA1CA2CA9IDO1
SCHEMBL3482328 0.82 TP53 (0.52) TP53KMT2APPARGPPARAIDO1
SCHEMBL3482609 0.80 LPL (0.39) TP53TAAR1CA2IDO1LMNA
SCHEMBL3482165 0.79 CYP19A1 (0.40) TP53MEN1KMT2APPARGPPARA
SCHEMBL3482681 0.76 NPC1 (0.39) CA1CA2CA9IDO1NPC1
SCHEMBL3481907 0.75 LPL (0.41) TP53TAAR1CA2IDO1LMNA
SCHEMBL3482498 0.75 TP53 (0.42) TP53MEN1KMT2ACA1CA2
SCHEMBL633290 0.74 TP53 (0.78) TP53TAAR1FFAR1
SCHEMBL8275557 0.73 NPC1 (0.65) TP53CHRNB4CHRNA3CHRNA7MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed