SCHEMBL3482609

SCHEMBL3482609

CCCO[SiH2]c1ccc(CC)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LPL P06858 1/20 0.39
LIPG Q9Y5X9 1/20 0.39
TP53 P04637 1/20 0.36
TAAR1 Q96RJ0 1/20 0.35
CYP2A6 P11509 1/20 0.34
SMN1; SMN2 Q16637 3/20 0.33
ALDH1A1 P00352 2/20 0.33
LMNA P02545 2/20 0.33
MAPT P10636 1/20 0.33
HPGD P15428 1/20 0.33
TDP1 Q9NUW8 2/20 0.32
L3MBTL1 Q9Y468 2/20 0.32
CA2 P00918 1/20 0.32
TSHR P16473 1/20 0.32
MAPK1 P28482 1/20 0.32
ATM Q13315 1/20 0.32
CYP2C19 P33261 1/20 0.32
PLAU P00749 1/20 0.31
SOD1 P00441 1/20 0.31
PLK1 P53350 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481907 0.83 LPL (0.41) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL3481941 0.81 ACHE (0.35) LPLLIPGTDP1CA2IDO1
SCHEMBL3482384 0.80 TP53 (0.48) TP53TAAR1LMNACA2IDO1
SCHEMBL703559 0.78 LMNA (0.39) TP53SMN1; SMN2ALDH1A1LMNAHPGD
SCHEMBL3481542 0.77 TP53 (0.45) TP53LMNATDP1L3MBTL1IDO1
SCHEMBL22721195 0.76 MAOA (0.37)
SCHEMBL3482165 0.76 CYP19A1 (0.40) TP53L3MBTL1
SCHEMBL3482550 0.76 LPL (0.43) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL21409798 0.75 CHRNB2 (0.44) ALDH1A1TSHR
SCHEMBL3482328 0.75 TP53 (0.52) LPLLIPGTP53ALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed