SCHEMBL3481907

SCHEMBL3481907

CCO[SiH2]c1ccc(CC)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LPL P06858 1/20 0.41
LIPG Q9Y5X9 1/20 0.41
TP53 P04637 1/20 0.39
TAAR1 Q96RJ0 1/20 0.38
CYP2A6 P11509 1/20 0.37
ALDH1A1 P00352 1/20 0.35
SMN1; SMN2 Q16637 2/20 0.34
TDP1 Q9NUW8 2/20 0.34
L3MBTL1 Q9Y468 2/20 0.34
CA2 P00918 1/20 0.34
TSHR P16473 1/20 0.34
MAPK1 P28482 1/20 0.34
ATM Q13315 1/20 0.34
POLB P06746 1/20 0.33
PLAU P00749 1/20 0.33
CYP2C19 P33261 1/20 0.33
LMNA P02545 1/20 0.33
SOD1 P00441 1/20 0.33
PLK1 P53350 1/20 0.32
MGLL Q99685 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482609 0.83 LPL (0.39) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL27999545 0.83 HRH3 (0.41) TAAR1CA2
SCHEMBL3482550 0.79 LPL (0.43) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL3481787 0.79 ACHE (0.38) LPLLIPGALDH1A1SMN1; SMN2TDP1
SCHEMBL3482328 0.78 TP53 (0.52) LPLLIPGTP53ALDH1A1TDP1
SCHEMBL31416082 0.77 LMNA (0.36) CYP2A6ALDH1A1SMN1; SMN2TDP1TSHR
SCHEMBL2804398 0.77 TDP1 (0.46) TP53ALDH1A1TDP1L3MBTL1TSHR
SCHEMBL703521 0.76 LTA4H (0.37) TP53ALDH1A1L3MBTL1TSHR
SCHEMBL3482476 0.76 LPL (0.40) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL28164375 0.76 CA1 (0.48) TAAR1ALDH1A1TDP1L3MBTL1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed