SCHEMBL3482476

SCHEMBL3482476

CCc1ccc([SiH2]OC(C)C)cc1

nearest known ligand 0.40

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LPL P06858 1/20 0.40
LIPG Q9Y5X9 1/20 0.40
TSHR P16473 1/20 0.38
MAPK1 P28482 1/20 0.38
ATM Q13315 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
TP53 P04637 1/20 0.37
TAAR1 Q96RJ0 1/20 0.37
CYP2A6 P11509 1/20 0.35
MGLL Q99685 2/20 0.35
ALDH1A1 P00352 1/20 0.34
SMN1; SMN2 Q16637 2/20 0.33
CA2 P00918 1/20 0.33
CYP2C19 P33261 1/20 0.32
PLAU P00749 1/20 0.32
LMNA P02545 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL676009 0.83
SCHEMBL3482380 0.77 TP53 (0.43) LPLLIPGTSHRMAPK1ATM
SCHEMBL3482550 0.77 LPL (0.43) LPLLIPGTSHRMAPK1ATM
SCHEMBL3481907 0.76 LPL (0.41) LPLLIPGTSHRMAPK1ATM
SCHEMBL3482509 0.75 TP53 (0.45) LPLLIPGTSHRMAPK1ATM
SCHEMBL15835144 0.74 TP53 (0.43) TSHRMAPK1ATMTDP1L3MBTL1
SCHEMBL1172632 0.73 MAPT (0.38) TSHRMAPK1TDP1TP53ALDH1A1
SCHEMBL22551519 0.73 IDO1 (0.31)
SCHEMBL3482609 0.72 LPL (0.39) LPLLIPGTSHRMAPK1ATM
SCHEMBL3482167 0.72 LPL (0.39) LPLLIPGTSHRMAPK1ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed