SCHEMBL3482697

SCHEMBL3482697

CCCCc1ccccc1[SiH](OCCC)OCCC

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LIPG Q9Y5X9 1/20 0.42
CYP3A4 P08684 2/20 0.40
CYP2D6 P10635 1/20 0.40
CYP2C9 P11712 1/20 0.40
ALOX5 P09917 1/20 0.38
PTGS2 P35354 1/20 0.38
THRA P10827 1/20 0.36
THRB P10828 1/20 0.36
TYR P14679 1/20 0.36
TSHR P16473 3/20 0.35
TDP1 Q9NUW8 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
TP53 P04637 1/20 0.34
MAPK1 P28482 1/20 0.34
TLR8 Q9NR97 1/20 0.34
PPARA Q07869 1/20 0.34
BID P55957 2/20 0.33
BCL2L1 Q07817 2/20 0.33
MCL1 Q07820 2/20 0.33
BAK1 Q16611 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482236 0.89 ALDH1A1 (0.35) LIPGPPARA
SCHEMBL28693907 0.88 LIPG (0.45) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL3481842 0.88 LIPG (0.40) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL4279852 0.84 TSHR (0.43) LIPGCYP3A4CYP2C9THRATHRB
SCHEMBL4281348 0.84 ALDH1A1 (0.40) CYP3A4TSHRTDP1L3MBTL1TP53
SCHEMBL11033254 0.83 LIPG (0.44) LIPGALOX5PTGS2THRATHRB
SCHEMBL3482639 0.82 LIPG (0.41) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL2961139 0.81 ALDH1A1 (0.42) CYP3A4CYP2C9TSHRTDP1L3MBTL1
SCHEMBL15361914 0.79 TSHR (0.48) CYP3A4THRATHRBTSHRTDP1
SCHEMBL2525305 0.78 LIPG (0.47) LIPGCYP3A4CYP2D6CYP2C9ALOX5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed