SCHEMBL3482432

SCHEMBL3482432

CCCC(CC)(O[SiH3])c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 2/20 0.35
CYP2C19 P33261 3/20 0.35
SCN1A P35498 3/20 0.35
SCN2A Q99250 3/20 0.35
SCN3A Q9NY46 3/20 0.35
SIGMAR1 Q99720 2/20 0.35
LMNA P02545 2/20 0.35
CYP1A2 P05177 2/20 0.35
CYP3A4 P08684 2/20 0.35
CYP2D6 P10635 2/20 0.35
CYP2C9 P11712 2/20 0.35
TSHR P16473 1/20 0.35
NFKB1 P19838 1/20 0.35
MTOR P42345 1/20 0.35
RAB9A P51151 1/20 0.35
MAPK1 P28482 1/20 0.34
NPSR1 Q6W5P4 2/20 0.34
KDM4E B2RXH2 1/20 0.34
MEN1 O00255 1/20 0.34
NR1I2 O75469 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703240 0.92 KCNN4 (0.38) KCNN4CYP2C19SCN1ASCN2ASCN3A
SCHEMBL3481596 0.89 KIF11 (0.36) KCNN4SIGMAR1MAPK1KMT2AGAA
SCHEMBL704326 0.88 KCNN4 (0.40) KCNN4SIGMAR1TSHRMAPK1KIF11
SCHEMBL11418602 0.85 KCNN4 (0.33) KCNN4SIGMAR1CYP2D6MAPK1NPSR1
SCHEMBL7618073 0.84 CYP1A2 (0.40) CYP2C19SCN1ASCN2ASCN3ASIGMAR1
SCHEMBL706928 0.81 KIF11 (0.38) KCNN4SIGMAR1MAPK1KMT2AGAA
SCHEMBL7622713 0.79 CYP1A2 (0.42) KCNN4CYP2C19LMNACYP1A2CYP3A4
SCHEMBL4671959 0.77 LMNA (0.35) KCNN4CYP2C19SCN1ASCN2ASCN3A
SCHEMBL4671965 0.77 CYP2C19 (0.35) KCNN4CYP2C19SCN1ASCN2ASCN3A
SCHEMBL3482436 0.76 KCNN4 (0.38) KCNN4CYP2C19SCN1ASCN2ASCN3A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed