SCHEMBL3482436

SCHEMBL3482436

CCCC(O[SiH3])(c1ccccc1)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.38
MAPK1 P28482 1/20 0.37
LMNA P02545 3/20 0.36
SCN1A P35498 3/20 0.36
SCN2A Q99250 3/20 0.36
SCN3A Q9NY46 3/20 0.36
SIGMAR1 Q99720 2/20 0.36
CYP1A2 P05177 2/20 0.36
CYP3A4 P08684 2/20 0.36
CYP2D6 P10635 2/20 0.36
CYP2C9 P11712 2/20 0.36
CYP2C19 P33261 2/20 0.36
TSHR P16473 1/20 0.36
NFKB1 P19838 1/20 0.36
MTOR P42345 1/20 0.36
RAB9A P51151 1/20 0.36
KDM4E B2RXH2 1/20 0.36
MEN1 O00255 1/20 0.36
NR1I2 O75469 1/20 0.36
CYP1A1 P04798 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3415673 0.88 KIF11 (0.38) KCNN4MAPK1LMNASIGMAR1KIF11
SCHEMBL3481756 0.88 LTA4H (0.38) KCNN4MAPK1SIGMAR1MEN1KMT2A
SCHEMBL703240 0.83 KCNN4 (0.38) KCNN4MAPK1LMNASCN1ASCN2A
SCHEMBL2238102 0.83 KCNN4 (0.40) KCNN4MAPK1LMNASIGMAR1TAAR1
SCHEMBL5614716 0.83 KCNN4 (0.40) KCNN4MAPK1LMNASCN1ASCN2A
SCHEMBL4079897 0.79 TSHR (0.36) KCNN4MAPK1CYP1A2TSHRTAAR1
SCHEMBL7799317 0.79 KCNN4 (0.38) KCNN4MAPK1LMNASCN1ASCN2A
SCHEMBL3959640 0.79 KCNN4 (0.38) KCNN4MAPK1LMNASCN1ASCN2A
SCHEMBL4078047 0.79 ALDH1A1 (0.34) KCNN4MAPK1TSHRHSD17B10TAAR1
SCHEMBL4082792 0.79 TDP1 (0.33) KCNN4MAPK1LMNASIGMAR1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN claimed
EP-3812428-B1 COLLOIDAL STRUCTURE, MULTI-COLLOIDAL STRUCTURE, AND PRODUCTION METHOD FOR COLLOIDAL STRUCTURE PANASONIC IP MAN CO LTD (JP) 2025-12-03 EP disclosed
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN disclosed
CN-112424290-B Colloid structure, colloid multiple structure, and method for producing colloid structure 松下知识产权经营株式会社 2023-08-22 CN disclosed
EP-4056604-B1 METHOD FOR PRODUCING COPOLYMER OF 1,3,7-OCTATRIENE AND STYRENE KURARAY CO (JP) 2023-08-02 EP disclosed
EP-3564280-B1 COPOLYMER OF 1, 3, 7-OCTATRIENE AND STYRENE AND HYDRIDE THEREOF KURARAY CO (JP) 2023-07-26 EP disclosed
EP-4163312-A1 COPOLYMER OF 1,3,7-OCTATRIENE AND ISOPRENE, HYDRIDE THEREOF, AND METHOD FOR PRODUCING SAID COPOLYMER Kuraray Co., Ltd. (JP) 2023-04-12 EP disclosed
EP-4163311-A1 COPOLYMER OF 1,3,7-OCTATRIENE AND ISOPRENE, HYDRIDE THEREOF, AND METHOD FOR PRODUCING SAID COPOLYMER Kuraray Co., Ltd. (JP) 2023-04-12 EP disclosed
EP-3564274-B1 1, 3, 7-OCTATRIENE POLYMER, HYDRIDE THEREOF, AND METHOD FOR PRODUCING SAID POLYMER KURARAY CO (JP) 2022-12-28 EP disclosed
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN disclosed
US-20170204214-A1 METHOD FOR MANUFACTURING HYDROGENATED POLYMER KURARAY CO., LTD. (JP) 2017-07-20 US disclosed
EP-3162816-A1 METHOD FOR MANUFACTURING HYDROGENATED POLYMER Kuraray Co., Ltd. (JP) 2017-05-03 EP disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7604866-B2 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2009-10-20 US disclosed
US-20060269724-A1 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2006-11-30 US disclosed
CN-1739190-A Fluorine-free plasma curing method for porous Low-K material AXCELIS TECH INC (US) 2006-02-22 CN disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed