SCHEMBL706928

SCHEMBL706928

CCCCC(CCCC)(O[SiH3])c1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
KIF11 P52732 4/20 0.38
SIGMAR1 Q99720 2/20 0.38
LTA4H P09960 2/20 0.36
ESR1 P03372 2/20 0.36
ESR2 Q92731 2/20 0.36
KCNN4 O15554 1/20 0.35
MAPK1 P28482 1/20 0.34
GAA P10253 1/20 0.34
EBP Q15125 1/20 0.34
KCNH2 Q12809 1/20 0.33
KMT2A Q03164 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481596 0.93 KIF11 (0.36) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL27614347 0.90 KIF11 (0.35) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL703240 0.88 KCNN4 (0.38) KIF11SIGMAR1KCNN4MAPK1KMT2A
SCHEMBL27595318 0.88 KIF11 (0.34) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL9168403 0.85 LTA4H (0.38) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL3415673 0.85 KIF11 (0.38) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL7910679 0.84 SIGMAR1 (0.39) KIF11SIGMAR1MAPK1EBPKMT2A
SCHEMBL3482432 0.81 KCNN4 (0.35) KIF11SIGMAR1KCNN4MAPK1GAA
SCHEMBL3481756 0.81 LTA4H (0.38) KIF11SIGMAR1LTA4HKCNN4MAPK1
SCHEMBL27983297 0.81 KIF11 (0.38) KIF11SIGMAR1LTA4HESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4056604-B1 METHOD FOR PRODUCING COPOLYMER OF 1,3,7-OCTATRIENE AND STYRENE KURARAY CO (JP) 2023-08-02 EP disclosed
EP-3564280-B1 COPOLYMER OF 1, 3, 7-OCTATRIENE AND STYRENE AND HYDRIDE THEREOF KURARAY CO (JP) 2023-07-26 EP disclosed
EP-4163312-A1 COPOLYMER OF 1,3,7-OCTATRIENE AND ISOPRENE, HYDRIDE THEREOF, AND METHOD FOR PRODUCING SAID COPOLYMER Kuraray Co., Ltd. (JP) 2023-04-12 EP disclosed
EP-4163311-A1 COPOLYMER OF 1,3,7-OCTATRIENE AND ISOPRENE, HYDRIDE THEREOF, AND METHOD FOR PRODUCING SAID COPOLYMER Kuraray Co., Ltd. (JP) 2023-04-12 EP disclosed
EP-3564274-B1 1, 3, 7-OCTATRIENE POLYMER, HYDRIDE THEREOF, AND METHOD FOR PRODUCING SAID POLYMER KURARAY CO (JP) 2022-12-28 EP disclosed
EP-4056604-A1 METHOD FOR PRODUCING COPOLYMER OF 1,3,7-OCTATRIENE AND STYRENE Kuraray Co., Ltd. (JP) 2022-09-14 EP disclosed
US-11332567-B2 Copolymer of 1, 3, 7-octatriene and butadiene, hydride thereof, and method for producing said copolymer KURARAY CO., LTD. (JP) 2022-05-17 US disclosed
US-11198744-B2 1,3, 7-octatriene polymer, hydride thereof, and method for producing said polymer KURARAY CO., LTD. (JP) 2021-12-14 US disclosed
US-11091578-B2 Copolymer of 1,3,7-octatriene and isoprene, hydride thereof, and method for producing said copolymer KURARAY CO., LTD. (JP) 2021-08-17 US disclosed
US-20200095359-A1 COPOLYMER OF 1, 3, 7-OCTATRIENE AND STYRENE, HYDRIDE THEREOF, AND METHOD FOR PRODUCING SAID COPOLYMER KURARAY CO., LTD. (JP) 2020-03-26 US disclosed
US-20170204214-A1 METHOD FOR MANUFACTURING HYDROGENATED POLYMER KURARAY CO., LTD. (JP) 2017-07-20 US disclosed
EP-3162816-A1 METHOD FOR MANUFACTURING HYDROGENATED POLYMER Kuraray Co., Ltd. (JP) 2017-05-03 EP disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed