SCHEMBL3482550

SCHEMBL3482550

CCc1ccc([SiH2]OC)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LPL P06858 1/20 0.43
LIPG Q9Y5X9 1/20 0.43
TP53 P04637 1/20 0.40
TAAR1 Q96RJ0 1/20 0.39
CYP2A6 P11509 1/20 0.38
ALDH1A1 P00352 2/20 0.37
TDP1 Q9NUW8 4/20 0.36
SMN1; SMN2 Q16637 2/20 0.35
L3MBTL1 Q9Y468 2/20 0.35
CA2 P00918 1/20 0.35
TSHR P16473 1/20 0.35
MAPK1 P28482 1/20 0.35
ATM Q13315 1/20 0.35
TUBB1 Q9H4B7 1/20 0.35
PLAU P00749 1/20 0.34
LMNA P02545 1/20 0.34
CYP2C19 P33261 1/20 0.34
APOBEC3G Q9HC16 1/20 0.34
PLK1 P53350 1/20 0.33
MGLL Q99685 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12271965 0.79 CA1 (0.34) CA2
SCHEMBL3481907 0.79 LPL (0.41) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL3482476 0.77 LPL (0.40) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL3482609 0.76 LPL (0.39) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL3482167 0.76 LPL (0.39) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL3482297 0.73 LPL (0.36) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL36295 0.72 TP53 (0.67) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL11964388 0.72 LPL (0.48) LPLLIPGTP53TAAR1CYP2A6
SCHEMBL3482489 0.72 TP53 (0.42) LPLLIPGTP53TAAR1ALDH1A1
SCHEMBL3482328 0.71 TP53 (0.52) LPLLIPGTP53ALDH1A1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed