SCHEMBL351892

SCHEMBL351892

Cc1ccc(C(=O)c2ccc(O)c(O)c2O)c(O)c1

nearest known ligand 0.60

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HDAC1 Q13547 1/20 0.55
CSNK2A1 P68400 1/20 0.48
SELL P14151 1/20 0.48
SELP P16109 1/20 0.48
TRPA1 O75762 1/20 0.48
NPC1 O15118 2/20 0.47
RAB9A P51151 2/20 0.47
TAS1R3 Q7RTX0 1/20 0.45
TAS1R1 Q7RTX1 1/20 0.45
TAS1R2 Q8TE23 1/20 0.45
ALOX15 P16050 4/20 0.44
MAPT P10636 4/20 0.44
KDM4E B2RXH2 3/20 0.44
ALDH1A1 P00352 3/20 0.44
HPGD P15428 3/20 0.44
RECQL P46063 2/20 0.44
HSD17B10 Q99714 2/20 0.44
ALOX12 P18054 2/20 0.43
MEN1 O00255 1/20 0.43
KMT2A Q03164 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29670690 1.00 HDAC1 (0.55) HDAC1CSNK2A1SELLSELPTRPA1
SCHEMBL30578000 0.88 NPC1 (0.56) CSNK2A1TRPA1NPC1RAB9ATAS1R3
SCHEMBL1758035 0.88 NPC1 (0.56) CSNK2A1TRPA1NPC1RAB9ATAS1R3
SCHEMBL8703962 0.86 HDAC1 (0.51) HDAC1CSNK2A1SELLSELPTRPA1
SCHEMBL30669864 0.83 HDAC1 (0.57) HDAC1CSNK2A1SELLSELPNPC1
SCHEMBL1063407 0.82 SELL (0.68) HDAC1SELLSELPALOX15MAPT
SCHEMBL93552 0.81 HDAC1 (0.58) HDAC1SELLSELPNPC1RAB9A
SCHEMBL14274483 0.81 NPC1 (0.54) CSNK2A1TRPA1NPC1RAB9ATAS1R3
SCHEMBL29450717 0.81 HDAC1 (0.58) HDAC1SELLSELPNPC1RAB9A
SCHEMBL11230455 0.81 CES2 (0.57) CSNK2A1NPC1RAB9ATAS1R3TAS1R1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20090030103-A1 METHOD OF FABRICATING A THIN FILM TRANSISTOR SUBSTRATE AND A PHOTOSENSITIVE COMPOSITION USED IN THE THIN FILM TRANSISTOR SUBSTRATE SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-01-29 US claimed
US-6686120-B2 THERMAL ACID GENERATOR AND A METHOD OF FORMING A PATTERN USING THE SAME. THE PHOTORESIST COMPOSITION INCLUDES ABOUT 100 PARTS BY WEIGHT OF AN ALKALI-SOLUBLE ACRYL COPOLYMER, ABOUT 5-100 PARTS BY WEIGHT OF 1,2-QUINONEDIAZIDE COMPOUND, ABOUT SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-03 US claimed
US-20030134222-A1 Photoresist composition and method of forming pattern using the same SAMSUNG ELECTRONICS CO., LTD. 2003-07-17 US claimed
EP-4131622-B1 SEPARATOR FOR LITHIUM SECONDARY BATTERY, METHOD FOR MANUFACTURING SAME, AND LITHIUM SECONDARY BATTERY COMPRISING SAME LG ENERGY SOLUTION LTD (KR) 2026-01-28 EP disclosed
US-12424707-B2 Separator for lithium secondary battery, manufacturing method therefor, and lithium secondary battery comprising same LG ENERGY SOLUTION, LTD. (KR) 2025-09-23 US disclosed
US-12424705-B2 Separator for lithium secondary battery, method for manufacturing same, and lithium secondary battery comprising same LG ENERGY SOLUTION, LTD. (KR) 2025-09-23 US disclosed
US-20230098650-A1 SEPARATOR FOR LITHIUM SECONDARY BATTERY, METHOD FOR MANUFACTURING SAME, AND LITHIUM SECONDARY BATTERY COMPRISING SAME LG ENERGY SOLUTION, LTD. (KR) 2023-03-30 US disclosed
US-20230090568-A1 SEPARATOR FOR LITHIUM SECONDARY BATTERY, MANUFACTURING METHOD THEREFOR, AND LITHIUM SECONDARY BATTERY COMPRISING SAME LG ENERGY SOLUTION, LTD. (KR) 2023-03-23 US disclosed
EP-4131622-A1 SEPARATOR FOR LITHIUM SECONDARY BATTERY, METHOD FOR MANUFACTURING SAME, AND LITHIUM SECONDARY BATTERY COMPRISING SAME LG Energy Solution, Ltd. (KR) 2023-02-08 EP disclosed
EP-4117105-A1 SEPARATOR FOR LITHIUM SECONDARY BATTERY, MANUFACTURING METHOD THEREFOR, AND LITHIUM SECONDARY BATTERY COMPRISING SAME LG Energy Solution, Ltd. (KR) 2023-01-11 EP disclosed
CN-110286561-A Radiation sensitive compositions, cured film and display element JSR株式会社 2019-09-27 CN disclosed
US-20060177767-A1 Photosensitive resin composition, thin film panel including a layer made from photosensitive resin composition, and method for manufacturing thin film panel SAMSUNG ELECTRONICS CO., LTD. 2006-08-10 US disclosed
US-20050042536-A1 Photosensitive resin composition comprising quinonediazide sulfate ester compound DONGJIN SEMICHEM CO. LTD. (KR) 2005-02-24 US disclosed
US-20040248030-A1 Photosensitive resin composition for photoresist DONGJIN SEMICHEM CO., LTD. (KR) 2004-12-09 US disclosed
US-6686120-B2 THERMAL ACID GENERATOR AND A METHOD OF FORMING A PATTERN USING THE SAME. THE PHOTORESIST COMPOSITION INCLUDES ABOUT 100 PARTS BY WEIGHT OF AN ALKALI-SOLUBLE ACRYL COPOLYMER, ABOUT 5-100 PARTS BY WEIGHT OF 1,2-QUINONEDIAZIDE COMPOUND, ABOUT SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-03 US disclosed
US-20030134222-A1 Photoresist composition and method of forming pattern using the same SAMSUNG ELECTRONICS CO., LTD. 2003-07-17 US disclosed
WO-2003036388-A1 PHOTOSNESITIVE RESIN COMPOSITION COMPRISING QUINONEDIAZIDE SULFATE ESTER COMPOUND DONGJIN SEMICHEM CO., LTD. (KR) 2003-05-01 WO disclosed
EP-0428398-B1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 1996-04-03 EP disclosed
US-5110706-A Photoresists for highly reflective substrates JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1992-05-05 US disclosed
EP-0428398-A2 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1991-05-22 EP disclosed