Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2206447 | 0.96 | — | — | |
| Hydrochloric Acid SCHEMBL265340 | 0.93 | — | — | |
| Bromide SCHEMBL4651773 | 0.93 | — | — | |
| Iodide SCHEMBL7216934 | 0.93 | — | — | |
| Methylene Chloride SCHEMBL4462021 | 0.84 | — | — | |
| SCHEMBL28718423 | 0.84 | — | — | |
| SCHEMBL23716908 | 0.83 | — | — | |
| Hydrochloric Acid SCHEMBL30358052 | 0.80 | CYP1A2 (0.33) | — | |
| Hydrochloric Acid SCHEMBL10830067 | 0.80 | — | — | |
| SCHEMBL5744333 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1566693-B1 | Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition | FUJIFILM CORP (JP) | 2018-05-23 | — | — | EP | disclosed |
| EP-1621927-B1 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORP (JP) | 2018-05-23 | — | — | EP | disclosed |
| US-9798235-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2017-09-07 | — | — | US | disclosed |
| US-9703196-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-11 | — | — | US | disclosed |
| US-20160370701-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| EP-1580598-B1 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORP (JP) | 2016-10-12 | — | — | EP | disclosed |
| US-9465292-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-20160187780-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-06-30 | — | — | US | disclosed |
| US-9316912-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| EP-1645908-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-04-12 | — | — | EP | disclosed |
| EP-1621927-A2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | Fuji Photo Film Co., Ltd. (JP) | 2006-02-01 | — | — | EP | disclosed |
| US-20060008736-A1 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJI PHOTO FILM CO., LTD. | 2006-01-12 | — | — | US | disclosed |
| EP-1612602-A2 | Photosensitive composition and method for forming pattern using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-01-04 | — | — | EP | disclosed |
| US-20050287473-A1 | Photosensitive composition and method for forming pattern using the same | FUJI PHOTO FILM CO., LTD. | 2005-12-29 | — | — | US | disclosed |
| EP-1580598-A2 | Positive resist composition for immersion exposure and pattern-forming method using the same | Fuji Photo Film Co. Ltd. (JP) | 2005-09-28 | — | — | EP | disclosed |
| US-20050208419-A1 | Fluoropolymer containing unsaturated monomer with a adamantyl, decalin, norbornyl, cedrol , cyclohexyl, cycloheptyl, cyclooctyl , a cyclodecanyl, cyclododecanyl and/or tricyclodecanyl group; sulfonium type compound generates acid upon exposure to actinic radiation; semiconductor, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2005-09-22 | — | — | US | disclosed |
| US-20050186505-A1 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2005-08-25 | — | — | US | disclosed |
| US-20050186503-A1 | Resist composition for immersion exposure and pattern formation method using the same | FUJI PHOTO FILM CO., LTD. | 2005-08-25 | — | — | US | disclosed |
| EP-1566693-A2 | Resist composition for immersion exposure and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2005-08-24 | — | — | EP | disclosed |