Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.32 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.31 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3614316 | 0.83 | L3MBTL1 (0.32) | L3MBTL1EPHX2 | |
| SCHEMBL103782 | 0.83 | HSD11B1 (0.31) | HSD11B1 | |
| SCHEMBL1131085 | 0.71 | EPHX2 (0.32) | EPHX2 | |
| SCHEMBL105280 | 0.70 | CYP2C9 (0.33) | — | |
| SCHEMBL105578 | 0.70 | HSD11B1 (0.30) | HSD11B1 | |
| SCHEMBL19798414 | 0.67 | FDFT1 (0.40) | L3MBTL1HSD11B1EPHX2 | |
| SCHEMBL105099 | 0.66 | — | — | |
| SCHEMBL4892356 | 0.64 | GBA1 (0.39) | L3MBTL1HSD11B1EPHX2 | |
| SCHEMBL1130262 | 0.63 | — | — | |
| SCHEMBL107728 | 0.62 | EPHX2 (0.35) | L3MBTL1HSD11B1EPHX2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 138 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2628744-B1 | Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process | SHINETSU CHEMICAL CO (JP) | 2016-11-30 | — | — | EP | claimed |
| EP-2628745-B1 | Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-03-25 | — | — | EP | claimed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4700067-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-25 | — | — | EP | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| US-20130045601-A1 | COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-21 | — | — | US | disclosed |
| EP-2560049-A2 | Composition for forming a silicon-containing resist underlayer film and patterning processing using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-02-20 | — | — | EP | disclosed |
| US-20130005150-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-03 | — | — | US | disclosed |
| EP-2540780-A1 | Composition for forming resist underlayer film and patterning process using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-01-02 | — | — | EP | disclosed |
| US-20120276483-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-01 | — | — | US | disclosed |
| EP-2518562-A2 | A patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-10-31 | — | — | EP | disclosed |
| US-20120238095-A1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-09-20 | — | — | US | disclosed |
| EP-2500775-A2 | Patterning process and composition for forming silicon-containing film usable therefor | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-09-19 | — | — | EP | disclosed |
| US-20100086878-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | L3MBTL1 1731/4885HSD11B1 3022/4885MAPK1 2286/4885 |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SMC2, F12, SMC1A | L3MBTL1 2207/4885HSD11B1 1016/4885MAPK1 3252/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | L3MBTL1 1596/4885HSD11B1 4099/4885MAPK1 2840/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | L3MBTL1 282/4885HSD11B1 727/4885MAPK1 1151/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.