SCHEMBL36430

SCHEMBL36430

Cc1cc(O)c(C2CCCCC2)cc1C(c1ccc(O)c(O)c1)c1cc(C2CCCCC2)c(O)cc1C

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HIF1A Q16665 3/20 0.39
HSD17B10 Q99714 3/20 0.39
NUDT1 P36639 1/20 0.39
BACE1 P56817 1/20 0.39
HSP90AA1 P07900 1/20 0.39
ADRB2 P07550 3/20 0.38
QDPR P09417 1/20 0.33
MAPT P10636 5/20 0.33
TDP1 Q9NUW8 5/20 0.33
KDM4E B2RXH2 4/20 0.33
MTOR P42345 3/20 0.33
LMNA P02545 3/20 0.33
ADRB1 P08588 2/20 0.33
ADRB3 P13945 2/20 0.33
TSHR P16473 2/20 0.33
NFKB1 P19838 2/20 0.33
KMT2A Q03164 2/20 0.33
PSMB5 P28074 1/20 0.33
MEN1 O00255 1/20 0.33
ALDH1A1 P00352 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29375152 1.00 HIF1A (0.39) HIF1AHSD17B10NUDT1BACE1HSP90AA1
SCHEMBL30374860 1.00 HIF1A (0.39) HIF1AHSD17B10NUDT1BACE1HSP90AA1
SCHEMBL759679 0.89 HSD17B10 (0.39) HIF1AHSD17B10NUDT1BACE1HSP90AA1
SCHEMBL29375621 0.89 HSD17B10 (0.39) HIF1AHSD17B10NUDT1BACE1HSP90AA1
SCHEMBL36658 0.88 NUDT1 (0.37) NUDT1BACE1HSP90AA1PSMB5
SCHEMBL29372915 0.88 NUDT1 (0.37) NUDT1BACE1HSP90AA1PSMB5
SCHEMBL2864394 0.88 NUDT1 (0.37) NUDT1BACE1HSP90AA1KDM4ELMNA
SCHEMBL29499852 0.88 NUDT1 (0.37) NUDT1BACE1HSP90AA1PSMB5
SCHEMBL28462503 0.87 HIF1A (0.41) HIF1AHSD17B10NUDT1BACE1HSP90AA1
SCHEMBL2201745 0.86 TRPM8 (0.42) QDPRMAPTLMNATSHRNFKB1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 586 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7879528-B2 For forming pattern that prevents contamination within the exposure apparatus; lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-01 US claimed
EP-2203783-A2 THICK FILM RESISTS AZ Electronic Materials USA Corp. (US) 2010-07-07 EP claimed
WO-2009040661-A2 THICK FILM RESISTS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2009-04-02 WO claimed
US-20090081589-A1 THICK FILM RESISTS MERCK PATENT GMBH (DE) 2009-03-26 US claimed
US-20080176170-A1 RESIST COMPOSITION FOR ELECTRON BEAM OR EUV TOKYO OHKA KOGYO CO., LTD. (JP) 2008-07-24 US claimed
US-6312863-B1 ALKALI-SOLUBLE RESIN; PHOTOSENSITIZER COMPRISING AN ESTER OF A 1,2-NAPHTHOQUINONEDIAZIDESULFONYL COMPOUND WITH A SUBSTITUTED M-BIS(HYDROXYBENZYL)PHENOL TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-06 US claimed
US-5501936-A IMPROVED RESOLUTION OF VERY FINE PATTERNS TOKYO OHKA KOGYO CO., LTD. (JP) 1996-03-26 US claimed
US-5434031-A Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive TOKYO OHKA KOGYO CO., LTD. (JP) 1995-07-18 US claimed
WO-2025079919-A1 PHOTOSENSITIVE RESIN PRECURSOR COMPOSITION, PHOTOSENSITIVE RESIN COMPOSITION, INSULATING FILM, AND SEMICONDUCTOR DEVICE 주식회사 엘지화학 2025-04-17 WO disclosed
EP-3961676-B1 ETCHING METHOD AND PHOTOSENSITIVE RESIN COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2025-01-22 EP disclosed
CN-117939914-A Structure, display element, pattern for partition wall, and method for forming the same 东京应化工业株式会社 2024-04-26 CN disclosed
CN-111205648-B Curable composition, cured product, microlens, and optical element 东京应化工业株式会社 2023-12-08 CN disclosed
CN-111324013-B Chemically amplified positive photosensitive resin composition and application thereof 奇美实业股份有限公司 2023-12-01 CN disclosed
CN-117106358-A Composition for forming separation layer, support substrate with separation layer, laminate, method for producing laminate, and method for producing electronic component 东京应化工业株式会社 2023-11-24 CN disclosed
US-5576138-A MIXTURE OF RESIN, PHOTOSENSITIZER AND BENZOPHENONE COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 1996-11-19 US disclosed
US-5501936-A IMPROVED RESOLUTION OF VERY FINE PATTERNS TOKYO OHKA KOGYO CO., LTD. (JP) 1996-03-26 US disclosed
US-5501936-A IMPROVED RESOLUTION OF VERY FINE PATTERNS TOKYO OHKA KOGYO CO., LTD. (JP) 1996-03-26 US disclosed
US-5478692-A Fine patterning for electronics TOKYO OHKA KOGYO CO., LTD. (JP) 1995-12-26 US disclosed
US-5434031-A Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive TOKYO OHKA KOGYO CO., LTD. (JP) 1995-07-18 US disclosed
US-5401605-A Positive working photosensitive resin composition containing 1,2-naphthoquinone diazide esterification product of triphenylmethane compound TOKYO OHKA KOGYO CO., LTD. (JP) 1995-03-28 US disclosed