Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL36457

C[S+](C)c1ccccc1.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.47

Full drug profile on Sugi Atlas →

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
GPR3 P46089 2/20 0.47
PTPN1 P18031 1/20 0.39
KCNH2 Q12809 10/20 0.37
ACHE P22303 5/20 0.37
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
CA5A P35218 1/20 0.35
CA9 Q16790 1/20 0.35
HSD11B1 P28845 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL8088603 0.96 GPR3 (0.44) GPR3PTPN1KCNH2ACHECA1
Trifluoromethanesulfonic Acid SCHEMBL8088601 0.93 GPR3 (0.42) GPR3PTPN1KCNH2ACHEHSD11B1
Trifluoromethanesulfonic Acid SCHEMBL30417623 0.89 PTPN1 (0.45) GPR3PTPN1KCNH2CA1CA2
Trifluoromethanesulfonic Acid SCHEMBL36165 0.88 GPR3 (0.47) GPR3PTPN1KCNH2ACHECA1
Sulfuric Acid SCHEMBL482693 0.85 CA12 (0.36) CA1CA2CA5ACA9
Trifluoromethanesulfonic Acid SCHEMBL3966822 0.84 PTPN1 (0.39) GPR3PTPN1CA1CA2CA5A
SCHEMBL1594209 0.84 GPR3 (0.34) GPR3PTPN1CA1CA2CA5A
Trifluoromethanesulfonic Acid SCHEMBL31155703 0.83 GPR3 (0.50) GPR3PTPN1KCNH2ACHECA1
Trifluoromethanesulfonic Acid SCHEMBL37032 0.83 GPR3 (0.50) GPR3PTPN1KCNH2ACHECA1
Sulfuric Acid SCHEMBL597317 0.83 CA12 (0.35) CA1CA2CA5ACA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1414 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114591128-B Direct cross-coupling method of aryl sulfide salt and aryl bromide 南京工业大学 2023-08-22 CN claimed
EP-2469337-B1 Positive photosensitive resin composition, method for forming pattern, and electronic component HITACHI CHEM DUPONT MICROSYS (JP) 2014-01-22 EP claimed
EP-2469337-A1 Positive photosensitive resin composition, method for forming pattern, and electronic component Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2012-06-27 EP claimed
US-8053158-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-11-08 US claimed
US-20070202436-A1 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-30 US claimed
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2026-05-28 US disclosed
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-28 US disclosed
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-02 US disclosed
EP-4714988-A1 FLUORINE-CONTAINING POLYMER, COMPOSITION FOR FORMING FLUORINE-CONTAINING RESIN FILM, FLUORINE-CONTAINING RESIN FILM, COMPOSITION FOR FORMING RESIST PATTERN, METHOD FOR FORMING RESIST PATTERN, COMPOSITION FOR FORMING RESIST UPPER LAYER FILM, METHOD FOR DECOMPOSING FLUORINE-CONTAINING POLYMER, FLUORINE-CONTAINING POLYMERIZABLE MONOMER, COMPOUND, AND METHOD FOR PRODUCING FLUORINE-CONTAINING POLYMERIZABLE MONOMER Central Glass Company, Limited (JP) 2026-03-25 EP disclosed
EP-4714990-A1 COPOLYMER, POLYMER FOR WATER-REPELLENT AGENT, COMPOSITION FOR FORMING WATER-REPELLENT FILM, RESIN FILM, AND METHOD FOR FORMING RESIST PATTERN Central Glass Company, Limited (JP) 2026-03-25 EP disclosed
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
US-5876900-A POLYHYDROXYSTYRENE POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-02 US disclosed
EP-0887705-A1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-30 EP disclosed
EP-0875787-A1 Method for reducing the substrate dependence of resist Wako Pure Chemical Industries, Ltd. (JP) 1998-11-04 EP disclosed
EP-0789279-A1 Polymer and resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1997-08-13 EP disclosed
EP-0780732-A2 Polymer composition and resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1997-06-25 EP disclosed
US-5558971-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
US-5558976-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR, PHOTORESISTS WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
EP-0704762-A1 Resist material and pattern formation WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1996-04-03 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ARCN1, GLRA1, PSMA1 GPR3 942/4885PTPN1 3250/4885KCNH2 1702/4885
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 GPR3 4109/4885PTPN1 1677/4885KCNH2 541/4885
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT CBR3, CBR1, NOTUM GPR3 3108/4885PTPN1 3130/4885KCNH2 543/4885
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION RPS21, CA11, RPL21 GPR3 4005/4885PTPN1 1312/4885KCNH2 2679/4885
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component PRDM9, ARCN1, PUF60 GPR3 3596/4885PTPN1 923/4885KCNH2 281/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.