Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL36165

C[S+](c1ccccc1)c1ccccc1.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.47

Full drug profile on Sugi Atlas →

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
GPR3 P46089 2/20 0.47
PTPN1 P18031 1/20 0.39
KCNH2 Q12809 10/20 0.37
ACHE P22303 5/20 0.37
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
CA5A P35218 1/20 0.35
CA9 Q16790 1/20 0.35
HSD11B1 P28845 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL31028107 0.90 KCNH2 (0.43) GPR3PTPN1KCNH2HSD11B1
Trifluoromethanesulfonic Acid SCHEMBL36457 0.88 GPR3 (0.47) GPR3PTPN1KCNH2ACHECA1
Trifluoromethanesulfonic Acid SCHEMBL74504 0.87 ALDH1A1 (0.39) GPR3
Trifluoromethanesulfonic Acid SCHEMBL8088603 0.85 GPR3 (0.44) GPR3PTPN1KCNH2ACHECA1
SCHEMBL1593671 0.84 GPR3 (0.34) GPR3PTPN1CA1CA2CA5A
Trifluoromethanesulfonic Acid SCHEMBL31155703 0.83 GPR3 (0.50) GPR3PTPN1KCNH2ACHECA1
Trifluoromethanesulfonic Acid SCHEMBL37032 0.83 GPR3 (0.50) GPR3PTPN1KCNH2ACHECA1
Trifluoromethanesulfonic Acid SCHEMBL2949122 0.83 GPR3 (0.36) GPR3KCNH2ACHECA1CA2
SCHEMBL270029 0.83 CA1 (0.36) GPR3PTPN1CA1CA2HSD11B1
Trifluoromethanesulfonic Acid SCHEMBL8100181 0.82 GPR3 (0.35) GPR3KCNH2ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 463 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2469337-B1 Positive photosensitive resin composition, method for forming pattern, and electronic component HITACHI CHEM DUPONT MICROSYS (JP) 2014-01-22 EP claimed
EP-2469337-A1 Positive photosensitive resin composition, method for forming pattern, and electronic component Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2012-06-27 EP claimed
EP-4714988-A1 FLUORINE-CONTAINING POLYMER, COMPOSITION FOR FORMING FLUORINE-CONTAINING RESIN FILM, FLUORINE-CONTAINING RESIN FILM, COMPOSITION FOR FORMING RESIST PATTERN, METHOD FOR FORMING RESIST PATTERN, COMPOSITION FOR FORMING RESIST UPPER LAYER FILM, METHOD FOR DECOMPOSING FLUORINE-CONTAINING POLYMER, FLUORINE-CONTAINING POLYMERIZABLE MONOMER, COMPOUND, AND METHOD FOR PRODUCING FLUORINE-CONTAINING POLYMERIZABLE MONOMER Central Glass Company, Limited (JP) 2026-03-25 EP disclosed
EP-4714990-A1 COPOLYMER, POLYMER FOR WATER-REPELLENT AGENT, COMPOSITION FOR FORMING WATER-REPELLENT FILM, RESIN FILM, AND METHOD FOR FORMING RESIST PATTERN Central Glass Company, Limited (JP) 2026-03-25 EP disclosed
WO-2024248136-A1 COPOLYMER, POLYMER FOR WATER-REPELLENT AGENT, COMPOSITION FOR FORMING WATER-REPELLENT FILM, RESIN FILM, AND METHOD FOR FORMING RESIST PATTERN セントラル硝子株式会社 2024-12-05 WO disclosed
WO-2024248135-A1 FLUORINE-CONTAINING POLYMER, COMPOSITION FOR FORMING FLUORINE-CONTAINING RESIN FILM, FLUORINE-CONTAINING RESIN FILM, COMPOSITION FOR FORMING RESIST PATTERN, METHOD FOR FORMING RESIST PATTERN, COMPOSITION FOR FORMING RESIST UPPER LAYER FILM, METHOD FOR DECOMPOSING FLUORINE-CONTAINING POLYMER, FLUORINE-CONTAINING POLYMERIZABLE MONOMER, COMPOUND, AND METHOD FOR PRODUCING FLUORINE-CONTAINING POLYMERIZABLE MONOMER セントラル硝子株式会社 2024-12-05 WO disclosed
CN-118295209-A Photoresist composition containing two sulfonium salts and preparation method and application thereof 中国科学院化学研究所 2024-07-05 CN disclosed
EP-2584409-B1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2021-04-28 EP disclosed
EP-2060600-B1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO LTD (JP) 2017-12-27 EP disclosed
EP-2093213-B1 Positive resist composition and method of forming a resist pattern using the same TOKYO OHKA KOGYO CO LTD (JP) 2017-10-04 EP disclosed
US-9618842-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
EP-1744213-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC COMPONENT Hitachi Chemical DuPont Microsystems Ltd. (JP) 2007-01-17 EP disclosed
EP-1736485-A1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-12-27 EP disclosed
US-20060194140-A1 Chemical amplification type positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2006-08-31 US disclosed
US-20060183876-A1 Resin for resist positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO, C., LTD. (JP) 2006-08-17 US disclosed
EP-1655315-A1 RESIN FOR RESIST, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-05-10 EP disclosed
EP-1602977-A1 Positive resist composition and compound used therein TOKYO OHKA KOGYO CO., LTD. (JP) 2005-12-07 EP disclosed
US-20050266340-A1 Positive resist composition and compound used therein TOKYO OHKA KOGYO CO., LTD. (JP) 2005-12-01 US disclosed
US-20050227172-A1 Process for producing photoresist composition, filtration device, application device, and photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-13 US disclosed
US-20050042540-A1 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. 2005-02-24 US disclosed