SCHEMBL366797

SCHEMBL366797

CC(C)OC([O])Cc1ccccc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 5/20 0.48
SIGMAR1 Q99720 4/20 0.48
SLC6A2 P23975 2/20 0.48
MAOA P21397 1/20 0.48
SLC6A4 P31645 1/20 0.48
SLC6A3 Q01959 1/20 0.48
CYP2A6 P11509 1/20 0.48
ADORA2A P29274 1/20 0.48
ADORA1 P30542 1/20 0.48
SLC18A2 Q05940 1/20 0.45
CYP2D6 P10635 1/20 0.45
TSHR P16473 2/20 0.44
MEN1 O00255 1/20 0.44
KMT2A Q03164 1/20 0.44
SLC1A3 P43003 1/20 0.44
SLC1A2 P43004 1/20 0.44
SLC1A1 P43005 1/20 0.44
NPC1 O15118 1/20 0.44
RAB9A P51151 1/20 0.44
TRPA1 O75762 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14667580 0.80 SIGMAR1 (0.54) TAAR1SIGMAR1SLC6A2MAOASLC6A4
SCHEMBL10949961 0.80 TAAR1 (0.54) TAAR1SIGMAR1SLC6A2MAOASLC6A4
SCHEMBL1357677 0.78 TAAR1 (0.46) TAAR1SIGMAR1SLC6A2MAOASLC6A4
SCHEMBL14667804 0.75 SIGMAR1 (0.48) TAAR1SIGMAR1SLC6A2MAOASLC6A4
SCHEMBL1356946 0.75 SLC6A2 (0.48) TAAR1SIGMAR1SLC6A2MAOASLC6A4
SCHEMBL3495199 0.75 TRPA1 (0.50) TAAR1SIGMAR1SLC6A2MAOASLC6A4
SCHEMBL412663 0.75 SIGMAR1 (0.58) TAAR1SIGMAR1SLC6A2MAOASLC6A4
SCHEMBL207297 0.75 TAAR1 (0.58) TAAR1SIGMAR1SLC6A2MAOASLC6A4
SCHEMBL24328238 0.75 SRR (0.62)
SCHEMBL8023124 0.75 SRR (0.62)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-102870047-B Positive radiation-sensitive composition, display element interlayer dielectric and forming method thereof JSR CORP. (JP) 2016-03-02 CN disclosed
CN-102870045-B Positive Radiation-sensitive Composition For Discharge Nozzle Coating Method, Interlayer Insulating Film For Display Element, And Formation Method For Same JSR CORP 2014-11-19 CN disclosed
CN-102213918-B Positive type radiation-sensitive composition, inter-layer insulating film and forming method therefor JSR CORP 2014-07-16 CN disclosed
CN-102967970-A Array substrate, liquid display element, and method for manufacturing array subsrtate JSR CORP 2013-03-13 CN disclosed
CN-102870047-A Positive radiation-sensitive composition, interlayer insulating film for display element, and formation method for same JSR CORP 2013-01-09 CN disclosed
CN-102870045-A Positive Radiation-sensitive Composition For Discharge Nozzle Coating Method, Interlayer Insulating Film For Display Element, And Formation Method For Same JSR CORP 2013-01-09 CN disclosed
CN-102859439-A Positive radiation-sensitive composition, interlayer insulating film for display element, and formation method for same JSR CORP 2013-01-02 CN disclosed
WO-2012007008-A1 INHIBITORS OF HDME EPITHERAPEUTICS APS (DK) 2012-01-19 WO disclosed
CN-101025567-B Radiation-sensitive resin composition, method for forming spacer and spacer JSR CO., LTD. (JP) 2011-12-14 CN disclosed
US-20110281040-A1 LIQUID CRYSTAL DISPLAY ELEMENT, POSITIVE TYPE RADIATION SENSITIVE COMPOSITION, INTERLAYER INSULATING FILM FOR LIQUID CRYSTAL DISPLAY ELEMENT, AND FORMATION METHOD THEREOF JSR CORPORATION (JP) 2011-11-17 US disclosed
CN-102243386-A Liquid crystal display device, positive radiation-sensitive composition, interlayer insulating film for liquid crystal display device and method for forming the same JSR CORP 2011-11-16 CN disclosed
CN-102221781-A Positive radiation sensitive composition, interlayer insulation film and forming method thereof JSR CORP 2011-10-19 CN disclosed
CN-102221782-A Positive radiation sensitive composition, interlayer insulation film and forming method thereof JSR CORP 2011-10-19 CN disclosed
CN-102213918-A Positive type radiation-sensitive composition, inter-layer insulating film and forming method therefor JSR CORP 2011-10-12 CN disclosed
US-7749678-B2 contains sulfonium compound; improved line edge roughness and pattern profile, and contrast of sensitivity and dissolution in extreme ultraviolet exposure FUJIFILM CORPORATION (JP) 2010-07-06 US disclosed
CN-101025567-A Radiation-sensitive resin composition, method for forming spacer and spacer JSR CORP (JP) 2007-08-29 CN disclosed
US-20050233242-A1 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2005-10-20 US disclosed
EP-0793144-B1 Radiation sensitive composition JAPAN SYNTHETIC RUBBER CO LTD (JP) 2001-01-17 EP disclosed
US-5962180-A COMPRISING (A) A COPOLYMER COMPRISING RECURRING UNITS OF A P-HYDROXYSTYRENE UNIT AND A STYRENE UNIT HAVING AN ACETAL GROUP OR A KETAL GROUP AT THE P-POSITION, (B) A COPOLYMER COMPRISING RECURRING UNITS OF A T-BUTYL (METH)ACRYLATE UNIT JSR CORPORATION (JP) 1999-10-05 US disclosed
EP-0793144-A2 Radiation sensitive composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-09-03 EP disclosed