SCHEMBL3674828

SCHEMBL3674828

CC(=O)OC(C)(C)C1CC2CCC1C2

nearest known ligand 0.34

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
SLC6A3 Q01959 5/20 0.34
EPHX2 P34913 1/20 0.34
HSD17B10 Q99714 1/20 0.33
ATM Q13315 1/20 0.33
POLB P06746 1/20 0.33
BRS3 P32247 1/20 0.32
KCNQ3 O43525 1/20 0.32
KCNQ2 O43526 1/20 0.32
KCNQ4 P56696 1/20 0.32
KCNQ5 Q9NR82 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.31
SLC6A4 P31645 3/20 0.31
CYP19A1 P11511 1/20 0.31
MEN1 O00255 1/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
KMT2A Q03164 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19561625 0.91 EPHX2 (0.34) SLC6A3EPHX2HSD17B10L3MBTL1
SCHEMBL4900373 0.84 SLC6A3 (0.33) SLC6A3EPHX2ATMPOLBBRS3
SCHEMBL16684205 0.84 SLC6A3 (0.33) SLC6A3EPHX2ATMPOLBBRS3
SCHEMBL26014451 0.83 EPHX2 (0.32) EPHX2
SCHEMBL25802902 0.83 SLC6A3 (0.31) SLC6A3EPHX2HSD17B10BRS3
SCHEMBL1819178 0.83 SLC6A3 (0.31) SLC6A3EPHX2HSD17B10BRS3
SCHEMBL9608692 0.81 KMT2A (0.37) SLC6A3EPHX2POLBL3MBTL1MEN1
SCHEMBL19497268 0.81 KMT2A (0.37) SLC6A3EPHX2POLBL3MBTL1MEN1
SCHEMBL120796 0.81 EPHX2 (0.40) SLC6A3EPHX2POLBBRS3L3MBTL1
SCHEMBL8557137 0.80 EPHX2 (0.37) SLC6A3EPHX2HSD17B10POLBBRS3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 109 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10915022-B2 Photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2021-02-09 US disclosed
US-20170351179-A1 COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-07 US disclosed
US-20170322490-A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT FUJIFILM CORPORATION (JP) 2017-11-09 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-9709892-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-20170199461-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND PROCESS FOR PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-07-13 US disclosed
US-20170199460-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-07-13 US disclosed
US-20170184974-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 US disclosed
US-20170184970-A1 PATTERN FORMING METHOD, COMPOSITION FOR FORMING UPPER LAYER FILM, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 US disclosed
US-20170176862-A1 PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20070254247-A1 Radiation-sensitive resin composition YAMAMOTO MASAFUMI 2007-11-01 US disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 US disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 US disclosed
EP-1720064-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2006-11-08 EP disclosed
US-20060223001-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-05 US disclosed
US-6403823-B2 Ester compounds having alicyclic structure and method for preparing same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-06-11 US disclosed
US-6403822-B2 NUCLEOPHILIC ADDITION OF ALICYCLIC CARBONYL AND METAL ENOLATE OF ACETATE; POLYCARBON MONOMERS FOR PHOTORESISTS; HIGH REACTIVITY AND SUBSTRATE AFFINITY SHIN-ETSU CHEMICAL, CO., LTD. (JP) 2002-06-11 US disclosed
US-20010051741-A1 Novel ester compounds having alicyclic structure and method for preparing same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-12-13 US disclosed
US-20010051742-A1 Novel ester compounds having alicyclic structure and method for preparing same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-12-13 US disclosed
EP-1149826-A2 Ester compounds having alicyclic structure, and methods for preparing the same Shin-Etsu Chemical Co., Ltd. (JP) 2001-10-31 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20010051742-A1 Novel ester compounds having alicyclic structure and method for preparing same ARCN1, ECH1, GAR1 SLC6A3 4798/4885EPHX2 246/4885HSD17B10 960/4885
US-20010051741-A1 Novel ester compounds having alicyclic structure and method for preparing same ARCN1, ECH1, ASIC1 SLC6A3 4870/4885EPHX2 210/4885HSD17B10 1786/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.