Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 3/20 | 0.46 |
| ▸ | POLB | P06746 | 1/20 | 0.39 |
| ▸ | MEN1 | O00255 | 1/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 2/20 | 0.39 |
| ▸ | MIF | P14174 | 1/20 | 0.38 |
| ▸ | AOC3 | Q16853 | 2/20 | 0.38 |
| ▸ | HKDC1 | Q2TB90 | 1/20 | 0.37 |
| ▸ | TRPA1 | O75762 | 1/20 | 0.37 |
| ▸ | TAAR1 | Q96RJ0 | 3/20 | 0.37 |
| ▸ | HTR2A | P28223 | 2/20 | 0.37 |
| ▸ | HRH1 | P35367 | 1/20 | 0.37 |
| ▸ | NOS3 | P29474 | 1/20 | 0.36 |
| ▸ | NOS2 | P35228 | 1/20 | 0.36 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.35 |
| ▸ | HTT | P42858 | 1/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.35 |
| ▸ | HPGD | P15428 | 1/20 | 0.35 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17442484 | 0.88 | LMNA (0.36) | LMNATSHRTDP1ALDH1A1 | |
| SCHEMBL523287 | 0.84 | LMNA (0.45) | LMNAPOLBMEN1KMT2ATSHR | |
| SCHEMBL3444925 | 0.83 | AOC3 (0.42) | LMNAPOLBTSHRAOC3TAAR1 | |
| SCHEMBL1304306 | 0.80 | CYP17A1 (0.36) | LMNAMEN1KMT2ATDP1KDM4E | |
| SCHEMBL18979305 | 0.79 | POLB (0.41) | LMNAPOLBAOC3HTR2AHRH1 | |
| SCHEMBL2872395 | 0.78 | ALDH1A1 (0.37) | LMNATSHRTDP1ALDH1A1 | |
| SCHEMBL28469707 | 0.78 | ESR1 (0.54) | LMNATSHRTAAR1TDP1KDM4E | |
| SCHEMBL574731 | 0.78 | SIGMAR1 (0.41) | POLBHTR2AALDH1A1 | |
| SCHEMBL22283489 | 0.77 | LMNA (0.46) | LMNAPOLBMEN1KMT2ATSHR | |
| SCHEMBL9745875 | 0.77 | LMNA (0.52) | LMNAPOLBMEN1KMT2ATSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119912690-A | Silicone resin prepolymer, modified polyester thereof and preparation methods of silicone resin prepolymer and modified polyester | 山东省科学院新材料研究所 | 2025-05-02 | — | — | CN | claimed |
| CN-117343638-A | Porous spin-on dielectric coating materials from silicon-containing polymers | 上海艾深斯科技有限公司 | 2024-01-05 | — | — | CN | claimed |
| CN-116500863-A | Composition of combined ARC and Si-based hard mask film | 上海艾深斯科技有限公司 | 2023-07-28 | — | — | CN | claimed |
| CN-116500863-B | Composition of combined ARC and Si-based hard mask film | 上海艾深斯科技有限公司 | 2026-02-27 | — | — | CN | disclosed |
| CN-119912690-A | Silicone resin prepolymer, modified polyester thereof and preparation methods of silicone resin prepolymer and modified polyester | 山东省科学院新材料研究所 | 2025-05-02 | — | — | CN | disclosed |
| CN-117343638-A | Porous spin-on dielectric coating materials from silicon-containing polymers | 上海艾深斯科技有限公司 | 2024-01-05 | — | — | CN | disclosed |
| CN-116500864-A | Composition of combined ARC and Si hard mask | 上海艾深斯科技有限公司 | 2023-07-28 | — | — | CN | disclosed |
| CN-116500863-A | Composition of combined ARC and Si-based hard mask film | 上海艾深斯科技有限公司 | 2023-07-28 | — | — | CN | disclosed |
| CN-109716491-B | Method for manufacturing field effect transistor and method for manufacturing wireless communication device | 东丽株式会社 | 2023-06-09 | — | — | CN | disclosed |
| EP-3514822-B1 | METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE | TORAY INDUSTRIES (JP) | 2023-04-26 | — | — | EP | disclosed |
| CN-113677719-A | Modified high-cis polydiene polymers, related methods, and rubber compositions | 株式会社普利司通 | 2021-11-19 | — | — | CN | disclosed |
| EP-2975649-A1 | FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2016-01-20 | — | — | EP | disclosed |
| US-8441002-B2 | Organic semiconductor composite, organic transistor material and organic field effect transistor | TORAY INDUSTRIES, INC. (JP) | 2013-05-14 | — | — | US | disclosed |
| EP-2109162-B1 | ORGANIC SEMICONDUCTOR COMPOSITE, ORGANIC TRANSISTOR MATERIAL AND ORGANIC FIELD EFFECT TRANSISTOR | TORAY INDUSTRIES (JP) | 2013-05-01 | — | — | EP | disclosed |
| US-20100102299-A1 | ORGANIC SEMICONDUCTOR COMPOSITE, ORGANIC TRANSISTOR MATERIAL AND ORGANIC FIELD EFFECT TRANSISTOR | TORAY INDUSTRIES, INC. (JP) | 2010-04-29 | — | — | US | disclosed |
| EP-2109162-A1 | ORGANIC SEMICONDUCTOR COMPOSITE, ORGANIC TRANSISTOR MATERIAL AND ORGANIC FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2009-10-14 | — | — | EP | disclosed |
| US-7291747-B2 | Silicon compounds and process for preparation thereof | CHISSO CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| US-20040143081-A1 | Novel silicon compounds and process for preparation thereof | JNC CORPORATION (JP) | 2004-07-22 | — | — | US | disclosed |
| EP-0731105-B1 | Optically active tertiary phosphine compounds, transition metal complexes comprising the same as ligands and process for preparing optically active organic silicon compounds using said transition metal complexes | SUMITOMO CHEMICAL CO (JP) | 2001-12-05 | — | — | EP | disclosed |
| EP-0731105-A1 | Optically active tertiary phosphine compounds, transition metal complexes comprising the same as ligands and process for preparing optically active organic silicon compounds using said transition metal complexes | SUMITOMO CHEMICAL COMPANY LIMITED (JP) | 1996-09-11 | — | — | EP | disclosed |