SCHEMBL382647

SCHEMBL382647

CCCCCCOc1cc(C)c(S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)c2cc(C)c(OCCCCCC)cc2C)cc1C

nearest known ligand 0.43

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
HTT P42858 5/20 0.43
LMNA P02545 4/20 0.43
SMN1; SMN2 Q16637 3/20 0.43
TSHR P16473 3/20 0.43
MAPK1 P28482 1/20 0.43
MAPT P10636 2/20 0.41
NPSR1 Q6W5P4 1/20 0.41
THRA P10827 3/20 0.39
THRB P10828 3/20 0.39
ESR1 P03372 2/20 0.38
S1PR3 Q99500 2/20 0.38
KDM4E B2RXH2 2/20 0.37
ALDH1A1 P00352 1/20 0.36
HPGD P15428 1/20 0.36
S1PR2 O95136 1/20 0.36
S1PR1 P21453 1/20 0.36
LPAR2 Q9HBW0 1/20 0.36
GAA P10253 1/20 0.35
RARB P10826 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5843996 0.94 S1PR3 (0.39) HTTLMNASMN1; SMN2TSHRMAPK1
SCHEMBL5843958 0.94 S1PR3 (0.39) HTTLMNASMN1; SMN2TSHRMAPK1
SCHEMBL5845625 0.94 S1PR3 (0.39) HTTLMNASMN1; SMN2TSHRMAPK1
SCHEMBL5844944 0.94 S1PR3 (0.39) HTTLMNASMN1; SMN2TSHRMAPK1
SCHEMBL5844975 0.94 S1PR3 (0.39) HTTLMNASMN1; SMN2TSHRMAPK1
SCHEMBL5844749 0.92 LMNA (0.37) HTTLMNASMN1; SMN2TSHRMAPK1
SCHEMBL5845626 0.88 LMNA (0.38) HTTLMNASMN1; SMN2TSHRMAPK1
SCHEMBL6735791 0.87 THRA (0.42) SMN1; SMN2TSHRMAPTTHRATHRB
SCHEMBL6744126 0.87 THRA (0.42) SMN1; SMN2TSHRMAPTTHRATHRB
SCHEMBL6741910 0.87 THRA (0.42) SMN1; SMN2TSHRMAPTTHRATHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 177 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
CN-107615168-B Radiation-sensitive composition 日产化学工业株式会社 2023-12-19 CN disclosed
CN-117008420-A Radiation-sensitive composition 日产化学工业株式会社 2023-11-07 CN disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
EP-3309614-B1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL CORP (JP) 2021-11-10 EP disclosed
CN-109563371-B Polysiloxane composition comprising acetal-protected silanol groups 日产化学株式会社 2021-09-21 CN disclosed
US-20190185707-A1 ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2019-06-20 US disclosed
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-06-28 US disclosed
EP-3309614-A1 RADIATION SENSITIVE COMPOSITION Nissan Chemical Industries, Ltd. (JP) 2018-04-18 EP disclosed
US-20050208424-A1 (Meth)acrylate polymer comprising (co)monomers having adamantane group such as 2-ethyl-2-adamantyl-methacrylate, 10.0 g of hydroxyadamantyl methacrylate, 15.2 g of 4,8-dioxatricyclo[4.2.1.03,7]nonan-5-on-2-yl methacrylate; sensitive to high energy radiation; resolution; micropatterning SHIN-ETSU CHEMICAL CO., LTD. 2005-09-22 US disclosed
US-20050106500-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-05-19 US disclosed
US-20050095533-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-05-05 US disclosed
US-20050089796-A1 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-28 US disclosed
US-20050058938-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-17 US disclosed
US-20050031988-A1 Resist polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-02-10 US disclosed
US-20050031989-A1 Resist polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-02-10 US disclosed
EP-1505443-A2 Resist polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-02-09 EP disclosed
US-6689530-B2 ULTRAVIOLET LITHOGRAPHY MICROFABRICATION WITH IMPROVED RESOLUTION AND PATTERN PROFILE AFTER DEVELOPMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-10 US disclosed
US-20030180653-A1 Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-25 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11561472-B2 Radiation sensitive composition RER1, RAD1, RAD51 HTT 4393/4885LMNA 211/4885SMN1; SMN2 3302/4885
US-20030180653-A1 Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process CACNA1A, KCNA1, POLL HTT 2413/4885LMNA 2767/4885SMN1; SMN2 3314/4885
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION RER1, RAD1, RAD51 HTT 4198/4885LMNA 247/4885SMN1; SMN2 3071/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 HTT 4847/4885LMNA 1043/4885SMN1; SMN2 2713/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.