SCHEMBL3839152

SCHEMBL3839152

CS(=O)(=O)Oc1ccccc1OS(C)(=O)=O

nearest known ligand 0.44

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
NFE2L2 Q16236 3/20 0.42
ELANE P08246 1/20 0.41
CA1 P00915 4/20 0.41
CA2 P00918 4/20 0.41
CA9 Q16790 4/20 0.41
CA12 O43570 1/20 0.41
CA4 P22748 1/20 0.41
CA7 P43166 1/20 0.41
CA14 Q9ULX7 1/20 0.41
KDM4E B2RXH2 1/20 0.40
KMT2A Q03164 1/20 0.40
HTR6 P50406 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
CDK4 P11802 1/20 0.38
CCND1 P24385 1/20 0.38
KEAP1 Q14145 1/20 0.37
ALDH1A1 P00352 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
PTGS2 P35354 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2599680 0.91 CA1 (0.59) NFE2L2CA1CA2CA9CA12
SCHEMBL31475556 0.91 CA1 (0.59) NFE2L2CA1CA2CA9CA12
SCHEMBL30821607 0.85 ALDH1A1 (0.45) ELANEKDM4EKMT2ASMN1; SMN2ALDH1A1
SCHEMBL6937363 0.85 ALDH1A1 (0.45) ELANEKDM4EKMT2ASMN1; SMN2ALDH1A1
SCHEMBL3753765 0.84 CXCL8 (0.43) NFE2L2ELANEKDM4ESMN1; SMN2ALDH1A1
SCHEMBL5536478 0.84 ELANE (0.35) NFE2L2ELANECA1CA2CA9
SCHEMBL17580831 0.84 PTGS2 (0.42) NFE2L2ELANECA1CA2CA9
SCHEMBL4609029 0.84 CA1 (0.40) ELANECA1CA2CA4KDM4E
SCHEMBL2001002 0.84 HSD11B1 (0.53) CA1CA2CA12CA4CA7
SCHEMBL196248 0.84 NFE2L2 (0.47) NFE2L2ELANEKDM4ESMN1; SMN2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111349024-A Synthesis method of (2-methylsulfonyloxyphenyl) methanesulfonate 石家庄圣泰化工有限公司 2020-06-30 CN claimed
US-5118582-A PATTERN FORMING MATERIAL AND PROCESS FOR FORMING PATTERN USING THE SAME HITACHI, LTD. (JP) 1992-06-02 US claimed
CN-111349024-A Synthesis method of (2-methylsulfonyloxyphenyl) methanesulfonate 石家庄圣泰化工有限公司 2020-06-30 CN disclosed
CN-111349024-A Synthesis method of (2-methylsulfonyloxyphenyl) methanesulfonate 石家庄圣泰化工有限公司 2020-06-30 CN disclosed
CN-111349024-A Synthesis method of (2-methylsulfonyloxyphenyl) methanesulfonate 石家庄圣泰化工有限公司 2020-06-30 CN disclosed
EP-2855426-A1 CATECHOL O-METHYLTRANSFERASE ACTIVITY INHIBITING COMPOUNDS Orion Corporation (FI) 2015-04-08 EP disclosed
WO-2013175053-A1 CATECHOL O-METHYLTRANSFERASE ACTIVITY INHIBITING COMPOUNDS ORION CORPORATION (FI) 2013-11-28 WO disclosed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
EP-1188807-B1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORP (JP) 2007-10-17 EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-6300465-B1 Process for producing phenylene-containing polymer and film-forming material JSR CORPORATION (JP) 2001-10-09 US disclosed
EP-0956312-A1 PROCESS FOR PRODUCING PHENYLENE-CONTAINING POLYMER AND FILM-FORMING MATERIAL JSR Corporation (JP) 1999-11-17 EP disclosed
WO-1998033836-A1 PROCESS FOR PRODUCING PHENYLENE-CONTAINING POLYMER AND FILM-FORMING MATERIAL JSR CORPORATION (JP) 1998-08-06 WO disclosed
EP-0388813-B1 Pattern forming material and process for forming pattern using the same HITACHI LTD (JP) 1997-12-10 EP disclosed
US-5470996-A Pattern forming material and process for forming pattern using the same HITACHI, LTD. (JP) 1995-11-28 US disclosed
US-5318876-A Solutions of water insoluble, base soluble polymeric binder, substituted sulfonium salts, substituted benzenesulfonates, having tolerance for delay between exposure and heating to develop BASF AKTIENGESELLSCHAFT (DE) 1994-06-07 US disclosed
US-5118582-A PATTERN FORMING MATERIAL AND PROCESS FOR FORMING PATTERN USING THE SAME HITACHI, LTD. (JP) 1992-06-02 US disclosed
EP-0388813-A2 Pattern forming material and process for forming pattern using the same HITACHI, LTD. (JP) 1990-09-26 EP disclosed
US-3939207-A Method for preparing aldehydes ESCHENMOSER ALBERT 1976-02-17 US disclosed