SCHEMBL384169

SCHEMBL384169

C[C](C)C1CC2CCC1C2

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.47
HSD11B1 P28845 1/20 0.42
HSD17B10 Q99714 1/20 0.40
KCNQ3 O43525 1/20 0.40
KCNQ2 O43526 1/20 0.40
KCNQ4 P56696 1/20 0.40
KCNQ5 Q9NR82 1/20 0.40
L3MBTL1 Q9Y468 2/20 0.39
NPC1 O15118 3/20 0.38
RAB9A P51151 3/20 0.38
MEN1 O00255 2/20 0.38
KMT2A Q03164 2/20 0.38
HPGD P15428 2/20 0.37
ALDH1A1 P00352 1/20 0.37
MAPT P10636 1/20 0.37
MAPK1 P28482 1/20 0.37
GFER P55789 1/20 0.37
HTT P42858 2/20 0.35
GAA P10253 2/20 0.35
THRB P10828 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL677903 0.84 POLB (0.47) POLBHSD11B1HSD17B10KCNQ3KCNQ2
SCHEMBL3813672 0.80 POLB (0.44) POLBHSD11B1HSD17B10KCNQ3KCNQ2
SCHEMBL25832101 0.80 POLB (0.53) POLBHSD11B1HSD17B10KCNQ3KCNQ2
SCHEMBL13397284 0.80 POLB (0.53) POLBHSD11B1HSD17B10KCNQ3KCNQ2
SCHEMBL1836060 0.80 POLB (0.53) POLBHSD11B1HSD17B10KCNQ3KCNQ2
SCHEMBL18560093 0.80 POLB (0.53) POLBHSD11B1HSD17B10KCNQ3KCNQ2
SCHEMBL14950352 0.80 POLB (0.53) POLBHSD11B1HSD17B10KCNQ3KCNQ2
SCHEMBL5405963 0.77 POLB (0.46) POLBHSD11B1HSD17B10KCNQ3KCNQ2
SCHEMBL27560786 0.76 POLB (0.48) POLBHSD11B1HSD17B10KCNQ3KCNQ2
SCHEMBL22087517 0.75 POLB (0.40) POLBHSD11B1HSD17B10KCNQ3KCNQ2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 636 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9126920-B2 Method for producing 2-isopropylidene-5-methyl-4-hexenyl butyrate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-08 US claimed
US-20150119597-A1 METHOD FOR PRODUCING 2-ISOPROPYLIDENE-5-METHYL-4-HEXENYL BUTYRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-04-30 US claimed
EP-2202577-B1 Chemically amplified positive resist composition and resist patterning process SHINETSU CHEMICAL CO (JP) 2014-08-27 EP claimed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US claimed
US-20240210830-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-27 US disclosed
US-20240184200-A1 AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-06 US disclosed
US-20240134280-A1 Polymer, Chemically Amplified Positive Resist Composition, Resist Patterning Process, And Mask Blank SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-04-25 US disclosed
US-20240118613-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-04-11 US disclosed
US-11953827-B2 Molecular resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-04-09 US disclosed
EP-4343433-A1 POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, RESIST PATTERNING PROCESS, AND MASK BLANK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-03-27 EP disclosed
CN-117736362-A Polymer, chemically amplified positive resist composition, resist pattern forming method, and blank mask 信越化学工业株式会社 2024-03-22 CN disclosed
EP-4336261-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-03-13 EP disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
US-20020090569-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-07-11 US disclosed
US-20020091215-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-11 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed
US-20020007031-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-17 US disclosed
EP-1149825-A2 Ester compounds, polymers, resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2001-10-31 EP disclosed
US-5147645-A Insecticides, miticides, nematocides BASF AKTIENGESELLSCHAFT (DE) 1992-09-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020007031-A1 Novel ester compounds, polymers, resist compositions and patterning process RER1, ARCN1, EMC1 POLB 603/4885HSD11B1 1350/4885HSD17B10 931/4885
US-20150119597-A1 METHOD FOR PRODUCING 2-ISOPROPYLIDENE-5-METHYL-4-HEXENYL BUTYRATE CYP8B1, HEXB, HPD POLB 2499/4885HSD11B1 31/4885HSD17B10 14/4885
US-20240184200-A1 AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS ADAR, HNRNPU, POLQ POLB 15/4885HSD11B1 4182/4885HSD17B10 4770/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.