SCHEMBL3871001

SCHEMBL3871001

CCOCOc1ccc([S+]2CCCC2)c2ccccc12

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 4/20 0.36
TSHR P16473 4/20 0.36
ALDH1A1 P00352 3/20 0.36
HTT P42858 3/20 0.36
MCOLN3 Q8TDD5 1/20 0.36
NPSR1 Q6W5P4 3/20 0.32
MAPT P10636 2/20 0.32
HPGD P15428 2/20 0.32
ALOX12 P18054 1/20 0.32
NTSR1 P30989 1/20 0.32
CCR6 P51684 1/20 0.32
MCL1 Q07820 1/20 0.32
HSD17B10 Q99714 2/20 0.32
GAA P10253 2/20 0.32
PKM P14618 1/20 0.32
CRHBP P24387 1/20 0.32
CRHR2 Q13324 1/20 0.32
SMN1; SMN2 Q16637 3/20 0.32
KDM4E B2RXH2 2/20 0.32
RECQL P46063 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3870771 0.88 CLCN2 (0.33) LMNATSHRALDH1A1HTTMCOLN3
SCHEMBL31040504 0.88 ALDH1A1 (0.45) LMNATSHRALDH1A1HTTMCOLN3
SCHEMBL137461 0.88 ALDH1A1 (0.45) LMNATSHRALDH1A1HTTMCOLN3
Trifluoromethanesulfonic Acid SCHEMBL648122 0.87 LMNA (0.36) LMNATSHRALDH1A1HTTMCOLN3
Trifluoromethanesulfonic Acid SCHEMBL31168292 0.87 LMNA (0.36) LMNATSHRALDH1A1HTTMCOLN3
SCHEMBL9949594 0.83 ALDH1A1 (0.41) LMNATSHRALDH1A1HTTMCOLN3
SCHEMBL31040506 0.82 CNR1 (0.44) TSHRHTTGAASMN1; SMN2KDM4E
SCHEMBL702260 0.82 CNR1 (0.44) TSHRHTTGAASMN1; SMN2KDM4E
SCHEMBL3163304 0.82 HTT (0.35) LMNATSHRALDH1A1HTTMCOLN3
SCHEMBL3158436 0.81 HTT (0.34) LMNATSHRALDH1A1HTTMCOLN3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7638261-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-12-29 US disclosed
US-20090148790-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-06-11 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
US-20080187859-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2008-08-07 US disclosed
US-20070269735-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed
US-7297461-B2 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-11-20 US disclosed
US-7288359-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-10-30 US disclosed
EP-1736829-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-12-27 EP disclosed
EP-1726608-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-11-29 EP disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-7108955-B2 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-19 US disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20040143082-A1 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-22 US disclosed
EP-1398339-A1 POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2004-03-17 EP disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed