Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 9/20 | 0.45 |
| ▸ | LMNA | P02545 | 6/20 | 0.45 |
| ▸ | TSHR | P16473 | 6/20 | 0.45 |
| ▸ | HTT | P42858 | 4/20 | 0.45 |
| ▸ | MCOLN3 | Q8TDD5 | 1/20 | 0.45 |
| ▸ | HPGD | P15428 | 6/20 | 0.40 |
| ▸ | NPSR1 | Q6W5P4 | 3/20 | 0.40 |
| ▸ | MAPT | P10636 | 3/20 | 0.40 |
| ▸ | ALOX12 | P18054 | 2/20 | 0.40 |
| ▸ | NTSR1 | P30989 | 1/20 | 0.40 |
| ▸ | CCR6 | P51684 | 1/20 | 0.40 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.40 |
| ▸ | MEN1 | O00255 | 2/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.37 |
| ▸ | GAA | P10253 | 2/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | RECQL | P46063 | 1/20 | 0.37 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.36 |
| ▸ | PKM | P14618 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31040504 | 1.00 | ALDH1A1 (0.45) | ALDH1A1LMNATSHRHTTMCOLN3 | |
| SCHEMBL9949594 | 0.94 | ALDH1A1 (0.41) | ALDH1A1LMNATSHRHTTMCOLN3 | |
| SCHEMBL3454520 | 0.92 | CNR2 (0.42) | ALDH1A1LMNATSHRHTTMCOLN3 | |
| SCHEMBL3871001 | 0.88 | LMNA (0.36) | ALDH1A1LMNATSHRHTTMCOLN3 | |
| SCHEMBL31040506 | 0.88 | CNR1 (0.44) | TSHRHTTMEN1KMT2ASMN1; SMN2 | |
| SCHEMBL702260 | 0.88 | CNR1 (0.44) | TSHRHTTMEN1KMT2ASMN1; SMN2 | |
| SCHEMBL3870771 | 0.87 | CLCN2 (0.33) | ALDH1A1LMNATSHRHTTMCOLN3 | |
| SCHEMBL106524 | 0.86 | CNR1 (0.45) | HTTMEN1KMT2AGAACNR2 | |
| SCHEMBL29429149 | 0.86 | CNR1 (0.45) | HTTMEN1KMT2AGAACNR2 | |
| Trifluoromethanesulfonic Acid SCHEMBL36662 | 0.86 | TSHR (0.44) | ALDH1A1LMNATSHRHTTMCOLN3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 203 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250147418-A1 | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE | JSR CORPORATION (JP) | 2025-05-08 | — | — | US | disclosed |
| WO-2023157801-A1 | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE | JSR株式会社 | 2023-08-24 | — | — | WO | disclosed |
| US-10423083-B2 | Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate | JSR CORPORATION (JP) | 2019-09-24 | — | — | US | disclosed |
| EP-2060600-B1 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO LTD (JP) | 2017-12-27 | — | — | EP | disclosed |
| EP-2325695-B1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP (JP) | 2017-12-20 | — | — | EP | disclosed |
| EP-2325694-B1 | RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR CORP (JP) | 2017-11-08 | — | — | EP | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-20170205709-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-20 | — | — | US | disclosed |
| US-20170205709-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-20 | — | — | US | disclosed |
| EP-1726608-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2006-11-29 | — | — | EP | disclosed |
| US-20060234153-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| US-7108955-B2 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-09-19 | — | — | US | disclosed |
| US-20050171226-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2005-08-04 | — | — | US | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-20040143082-A1 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-07-22 | — | — | US | disclosed |
| EP-1398339-A1 | POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2004-03-17 | — | — | EP | disclosed |
| US-20040048192-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-03-11 | — | — | US | disclosed |
| US-20030219680-A1 | Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams | JSR CORPORATION (JP) | 2003-11-27 | — | — | US | disclosed |
| US-20030170561-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-09-11 | — | — | US | disclosed |