SCHEMBL3884575

SCHEMBL3884575

Cc1ccc(S(=O)(=O)Oc2c(C)cc(C(c3ccccc3)(c3ccccc3)c3cc(C)c(OS(=O)(=O)c4ccc(C)cc4)c(C)c3)cc2C)cc1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KEAP1 Q14145 1/20 0.43
NFE2L2 Q16236 1/20 0.43
LMNA P02545 3/20 0.41
MAPK1 P28482 1/20 0.41
HSD11B1 P28845 1/20 0.40
HSD17B3 P37058 1/20 0.40
VDR P11473 1/20 0.40
MEN1 O00255 5/20 0.40
KMT2A Q03164 5/20 0.40
GAA P10253 2/20 0.40
ALPL P05186 1/20 0.40
ESR1 P03372 1/20 0.40
ESR2 Q92731 1/20 0.40
TUBB4A P04350 1/20 0.40
TUBB P07437 1/20 0.40
TUBA3C P0DPH7 1/20 0.40
TUBA1B P68363 1/20 0.40
TUBA4A P68366 1/20 0.40
TUBB4B P68371 1/20 0.40
TUBB3 Q13509 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3842506 0.92 ALPL (0.45) LMNAHSD11B1HSD17B3ALPLTUBB4A
SCHEMBL3843178 0.87 KEAP1 (0.41) KEAP1NFE2L2LMNAMAPK1HSD11B1
SCHEMBL3884571 0.86 FFAR4 (0.43) KEAP1NFE2L2LMNAMAPK1VDR
SCHEMBL3845370 0.83 HSD11B1 (0.48) KEAP1NFE2L2LMNAMAPK1HSD11B1
SCHEMBL3844214 0.82 ALDH1A1 (0.51) KEAP1NFE2L2LMNAHSD11B1HSD17B3
SCHEMBL3845368 0.82 KEAP1 (0.41) KEAP1NFE2L2LMNAMAPK1HSD11B1
SCHEMBL3838158 0.81 KMT2A (0.42) KEAP1NFE2L2LMNAMAPK1HSD11B1
SCHEMBL28584784 0.81 RAPGEF4 (0.53) KEAP1NFE2L2LMNAMAPK1MEN1
SCHEMBL3884584 0.81 MEN1 (0.44) LMNAHSD11B1HSD17B3MEN1KMT2A
SCHEMBL3838593 0.80 CYP1A2 (0.36) LMNAMAPK1GAAALPLESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 EP disclosed
EP-1188807-B1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORP (JP) 2007-10-17 EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-7153767-B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2006-12-26 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
US-6852370-B2 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2005-02-08 US disclosed
US-20050003218-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2005-01-06 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-20020172652-A1 Composition for film formation and material for insulating film formation JSR CORPORATION (JP) 2002-11-21 US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 EP disclosed
US-20020064953-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2002-05-30 US disclosed
EP-1188807-A2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR Corporation (JP) 2002-03-20 EP disclosed
EP-0956312-B1 PROCESS FOR PRODUCING PHENYLENE-CONTAINING POLYMER AND FILM-FORMING MATERIAL JSR CORP (JP) 2001-10-10 EP disclosed
US-6300465-B1 Process for producing phenylene-containing polymer and film-forming material JSR CORPORATION (JP) 2001-10-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020172652-A1 Composition for film formation and material for insulating film formation VCL, BMI1, PUF60 KEAP1 2600/4885NFE2L2 3484/4885LMNA 1305/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.