Hydrochloric Acid

Hydrochloric Acid

SCHEMBL392159

C[S+](C)CCCCCCCCCCCCCc1ccccc1.[Cl-]

nearest known ligand 0.52

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA

The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 12/20 0.52
L3MBTL1 Q9Y468 1/20 0.48
MAOA P21397 1/20 0.48
MAPT P10636 1/20 0.47
RXFP1 Q9HBX9 1/20 0.47
MAOB P27338 2/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL9442792 1.00 SIGMAR1 (0.52) SIGMAR1L3MBTL1MAOAMAPTRXFP1
SCHEMBL436348 0.90 SIGMAR1 (0.47) SIGMAR1L3MBTL1MAOAMAPTRXFP1
SCHEMBL12040615 0.82 SIGMAR1 (0.50) SIGMAR1L3MBTL1MAOAMAPTRXFP1
SCHEMBL12040642 0.82 SIGMAR1 (0.50) SIGMAR1L3MBTL1MAOAMAPTRXFP1
Hydrochloric Acid SCHEMBL394092 0.81 SIGMAR1 (0.46) SIGMAR1L3MBTL1MAOA
SCHEMBL11838960 0.80 ALDH1A1 (0.48) L3MBTL1MAOAMAOB
Hydrochloric Acid SCHEMBL394151 0.80 SIGMAR1 (0.44) SIGMAR1L3MBTL1MAOAMAPTRXFP1
SCHEMBL31651216 0.79 L3MBTL1 (0.48) SIGMAR1L3MBTL1MAOAMAOB
SCHEMBL8085946 0.79 SIGMAR1 (0.71) SIGMAR1L3MBTL1MAOAMAPTRXFP1
SCHEMBL2823250 0.79 SIGMAR1 (0.71) SIGMAR1L3MBTL1MAOAMAPTRXFP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8173584-B2 Composition and method for treating semiconductor substrate surface LASERWORT LTD (HK) 2012-05-08 US claimed
US-20120083436-A1 COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE LASERWORT LTD (HK) 2012-04-05 US claimed
US-8101561-B2 Composition and method for treating semiconductor substrate surface LASERWORT LTD (HK) 2012-01-24 US claimed
US-20110118165-A1 COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE Lee, Wai Mun (US) 2011-05-19 US claimed
US-8173584-B2 Composition and method for treating semiconductor substrate surface LASERWORT LTD (HK) 2012-05-08 US disclosed
US-20120083436-A1 COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE LASERWORT LTD (HK) 2012-04-05 US disclosed
US-8101561-B2 Composition and method for treating semiconductor substrate surface LASERWORT LTD (HK) 2012-01-24 US disclosed
US-20110118165-A1 COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE Lee, Wai Mun (US) 2011-05-19 US disclosed