SCHEMBL3950302

SCHEMBL3950302

Cl[Si](Cl)(Cl)C=Cc1ccc(C=C[Si](Cl)(Cl)Cl)cc1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
AHR P35869 1/20 0.35
CYP1A2 P05177 3/20 0.32
APP P05067 2/20 0.32
MAOB P27338 2/20 0.31
NFE2L2 Q16236 1/20 0.31
CYP19A1 P11511 1/20 0.31
MAOA P21397 1/20 0.31
KDM4E B2RXH2 2/20 0.30
MAPT P10636 2/20 0.30
ALDH1A1 P00352 1/20 0.30
MAPK1 P28482 1/20 0.30
HSD17B10 Q99714 1/20 0.30
NPC1 O15118 2/20 0.30
RAB9A P51151 2/20 0.30
SMN1; SMN2 Q16637 2/20 0.30
FBP1 P09467 1/20 0.30
MEN1 O00255 1/20 0.30
ALOX15 P16050 1/20 0.30
CASP1 P29466 1/20 0.30
HBB P68871 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5486754 0.87 NFE2L2 (0.48) CYP1A2MAOBNFE2L2MAOAKDM4E
SCHEMBL2045922 0.86 MAOB (0.50) CYP1A2MAOBNFE2L2CYP19A1MAOA
SCHEMBL2045920 0.86 MAOB (0.50) CYP1A2MAOBNFE2L2CYP19A1MAOA
SCHEMBL3949053 0.78 NFE2L2 (0.41) CYP1A2APPMAOBNFE2L2CYP19A1
SCHEMBL3957085 0.77 KDM4E (0.32) AHRCYP1A2APPNFE2L2KDM4E
SCHEMBL3956176 0.71 NFE2L2 (0.36) CYP1A2NFE2L2KDM4EMAPTALDH1A1
SCHEMBL8090989 0.69 MAOB (0.44) CYP1A2MAOBNFE2L2CYP19A1MAOA
SCHEMBL3627505 0.66 MAOB (0.46) MAOBNFE2L2CYP19A1MAOAKDM4E
SCHEMBL5903130 0.66 MAOB (0.46) MAOBNFE2L2CYP19A1MAOAKDM4E
SCHEMBL6557376 0.63 TDP1 (0.52) AHRMAOBMAPTALDH1A1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed